1-sec-butyl-2-naphthol | 90466-08-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 1-sec-butyl-2-naphthol
• 英文别名: 1-Isobutyl-2-hydroxy-naphthalin；1-Butan-2-ylnaphthalen-2-ol
• CAS: 90466-08-3
• 化学式: C₁₄H₁₆O
• 分子量: 200.28
• InChiKey: MANKGOJTHUPLEV-UHFFFAOYSA-N

物化性质

• 熔点：
  70-71 °C(Solv: ligroine (8032-32-4))
• 沸点：
  330.9±11.0 °C(Predicted)
• 密度：
  1.062±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4.5
• 重原子数：
  15
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.29
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  1-sec-butyl-2-naphthol 在 氧气 作用下， 反应 24.0h， 生成 1-sec-butyl-1-hydroperoxy-2(1H)-naphthalenone
  参考文献：
  名称：

  Bowman, Peter J.; Brown, Ben R.; Chapman, M. Andrew, Journal of Chemical Research, Miniprint, 1984, # 3, p. 701 - 770

  摘要：

  DOI：
• 作为产物：
  描述：

  2-溴丁烷 、 2-萘酚 在 sodium hydroxide 作用下， 反应 1.33h， 以3.95 g的产率得到2-sec-butoxynaphthalene
  参考文献：
  名称：

  Bowman, Peter J.; Brown, Ben R.; Chapman, M. Andrew, Journal of Chemical Research, Miniprint, 1984, # 3, p. 701 - 770

  摘要：

  DOI：

文献信息

• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD
  申请人：Inasaki Takeshi

  公开号：US20120301817A1

  公开（公告）日：2012-11-29

  An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.

  一种感光树脂组合物，其包括（P）一种具有以下式（1）所表示的重复单元的树脂，使用该组合物的光阻膜以及一种图案形成方法。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION
  申请人：INASAKI Takeshi

  公开号：US20130029255A1

  公开（公告）日：2013-01-31

  Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) which contains at least one phenolic hydroxyl group and at least one group where a hydrogen atom in a phenolic hydroxyl group is substituted by a group represented by the following General Formula (1). (in the formula, each of R 11 and R 12 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group; X 11 represents an aryl group; M 11 represents a single bond or a divalent linking group; and Q 11 represents an alkyl group, a cycloalkyl group or an aryl group, wherein the number of carbon atoms which are included in the group represented by -M 11 -Q 11 is 3 or more, and at least two of R 11 , R 12 , Q 11 , and X 11 may form a ring by bonding to each other)

  提供的是一种感光树脂组合物，其中包含至少含有一个酚羟基和至少一个氢原子被以下通式（1）所代表的基替换的基团的化合物（A）。（在通式中，R11和R12分别独立地表示氢原子、烷基、环烷基、芳基或芳基烷基；X11表示芳基；M11表示单键或二价连接基团；Q11表示烷基、环烷基或芳基，其中包含在-M11-Q11所代表的基团中的碳原子数为3或更多，并且R11、R12、Q11和X11中至少有两个可以通过相互键合形成环）
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN
  申请人：FUJIFILM Corporation

  公开号：US20150132688A1

  公开（公告）日：2015-05-14

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having (a) a repeating unit represented by the specific formula; a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method; and an electronic device manufactured by the manufacturing method of an electronic device.

  提供了一种光致射线敏感或辐射敏感的树脂组合物，其中包括（P）具有（a）由特定公式表示的重复单元的树脂；使用该光致射线敏感或辐射敏感的树脂组合物形成的抗蚀膜；包括（i）使用该光致射线敏感或辐射敏感的树脂组合物形成膜的步骤，（ii）曝光膜的步骤，以及（iii）使用显影剂显影曝光的膜以形成图案的图案形成方法；一种制造电子设备的方法，包括图案形成方法；以及通过电子设备的制造方法制造的电子设备。
• BOWMAN, P. J.;BROWN, B. R.;CHAPMAN, M. A.;DOYLE, P. M., J. CHEM. RES. MICROFICHE, 1984, N 3, 72-73
  作者：BOWMAN, P. J.、BROWN, B. R.、CHAPMAN, M. A.、DOYLE, P. M.

  DOI：——

  日期：——
• CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION
  申请人：INASAKI Takeshi

  公开号：US20120202141A1

  公开（公告）日：2012-08-09

  The object of the present invention is to solve the technical problems in the microfabrication of photomasks or semiconductors and is, in particular, to provide a chemical amplification type positive resist film, and a resist film, resist coated mask blanks and a method of forming a resist pattern using the composition, which satisfy at the same time all of high sensitivity, high resolution (for example, high resolving power), good exposure latitude (EL), and good line edge roughness (LER). A chemical amplification type positive resist composition comprising: a high molecular compound (A) having a repeating unit represented by the following general formula (1), a repeating unit represented by the following general formula (2), and a repeating unit represented by the following general formula (3).