N,N-diisopentyl-hydroxylamine | 99868-63-0

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: N,N-diisopentyl-hydroxylamine
• 英文别名: N,N-Diisopentyl-hydroxylamin；N.N-Diisoamyl-hydroxylamin；N,N-bis(3-methylbutyl)hydroxylamine
• CAS: 99868-63-0
• 化学式: C₁₀H₂₃NO
• 分子量: 173.299
• InChiKey: QSKCGBWBFNNGHW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.1
• 重原子数：
  12
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  23.5
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  triisopentyl-amine oxide 生成 N,N-diisopentyl-hydroxylamine
  参考文献：
  名称：

  Amine Oxides. II. Conversion to N,N-Dialkylhydroxylamines¹

  摘要：

  DOI：

  10.1021/ja01561a050

文献信息

• PROCESSING AGENT COMPOSITION FOR SEMICONDUCTOR SURFACE AND METHOD FOR PROCESSING SEMICONDUCTOR SURFACE USING SAME
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2475000A1

  公开（公告）日：2012-07-11

  The present invention is directed to provide a semiconductor surface treating agent composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent composition, comprising [I] a compound generating a fluorine ion in water, [11] a carbon radical generating agent, [111] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).

  本发明旨在提供一种半导体表面处理剂组合物，该组合物能够在半导体器件等的生产过程中在短时间内容易地剥离抗反射涂层、抗蚀层和固化抗蚀层，以及一种处理半导体表面的方法，其中包括使用该组合物。本发明涉及一种半导体表面处理剂组合物，包括[I]一种在水中生成氟离子的化合物、[11]一种碳自由基生成剂、[111]水、[IV]一种有机溶剂和[V]至少一种选自由通式[1]表示的羟胺和羟胺衍生物组成的组中的化合物，以及一种处理半导体表面的方法，包括使用该组合物： (其中 R1 代表直链、支链或环状 C1-6 烷基，或具有 1 至 3 个羟基的直链或支链 C1-4 取代烷基；R2 代表氢原子、直链、支链或环状 C1-6 烷基，或具有 1 至 3 个羟基的直链或支链 C1-4 取代烷基）。
• RESIST REMOVER COMPOSITION AND METHOD FOR REMOVING RESIST USING THE COMPOSITION
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2474862A1

  公开（公告）日：2012-07-11

  The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.

  本发明旨在提供一种用于半导体衬底的抗蚀剂去除剂组合物，该组合物能够在半导体领域的光刻工艺中简单方便地去除抗蚀剂，并提供一种去除抗蚀剂的方法，该方法包括使用该组合物。本发明涉及一种用于半导体衬底的抗蚀剂去除剂组合物，该组合物包含[I]一种碳自由基生成剂、[II]一种酸、[III]一种还原剂和[IV]一种有机溶剂，且 pH 值低于 7，以及一种去除抗蚀剂的方法，其中包括使用该组合物。
• SUBSTRATE CLEANER FOR COPPER WIRING, AND METHOD FOR CLEANING COPPER WIRING SEMICONDUCTOR SUBSTRATE
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2647693A1

  公开（公告）日：2013-10-09

  It is an object of the present invention to provide a cleaning agent for a substrate having a copper wiring, which makes possible to sufficiently suppress elution of metal copper, and remove impurities or particles of copper hydroxide (II), copper oxide (II) and the like, generated by the chemical mechanical polishing (CMP) process, in cleaning of a semiconductor substrate after the chemical mechanical polishing (CMP) process, in a manufacturing process of the semiconductor substrate; and a method for cleaning a semiconductor substrate having a copper wiring, characterized by using the relevant substrate cleaner for a copper wiring: and the present invention relates to a cleaning agent for a substrate having a copper wiring consisting of an aqueous solution comprising [I] an amino acid represented by the following general formula [1], and [II] an alkylhydroxylamine; and a method for cleaning a semiconductor substrate having a copper wiring characterized by using the relevant cleaning agent for a substrate having a copper wiring; (wherein R1 represents a hydrogen atom, a carboxymethyl group or a carboxyethyl group; and R2 and R3 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, which may have a hydroxyl group, provided that those where R1 to R3 are all hydrogen atoms are excluded.).

  本发明的目的是提供一种用于具有铜布线的衬底的清洗剂，该清洗剂能够在半导体衬底的制造过程中，在化学机械抛光(CMP)工序后清洗半导体衬底时，充分抑制金属铜的洗脱，并除去化学机械抛光(CMP)工序产生的氢氧化铜(II)、氧化铜(II)等杂质或颗粒；以及一种用于清洗具有铜布线的半导体衬底的方法，其特征在于使用相关的用于铜布线的衬底清洗剂：以及本发明涉及一种用于具有铜布线的衬底的清洁剂，该清洁剂由水溶液组成，该水溶液包含[I]由以下通式[1]表示的氨基酸和[II]烷基羟胺；以及一种用于清洁具有铜布线的半导体衬底的方法，其特征在于使用用于具有铜布线的衬底的相关清洁剂； (其中R1代表氢原子、羧甲基或羧乙基；R2和R3各自独立地代表氢原子或具有1至4个碳原子的烷基，该烷基可以具有羟基，但不包括R1至R3均为氢原子的情况)。
• CLEANING AGENT FOR METAL WIRING SUBSTRATE, AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2985783A1

  公开（公告）日：2016-02-17

  It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time. The present invention relates to a cleaning agent for a substrate having a metal wiring, comprising an aqueous solution containing (A) carboxylic acid having a nitrogen-containing heterocyclic ring and (B) alkylhydroxylamine, and having a pH of 10 or higher, as well as a cleaning method for a semiconductor substrate, comprising that the cleaning agent is used.

  本发明的目的是提供一种用于具有金属配线的基板的清洗剂，以及一种半导体基板的清洗方法，包括在半导体器件制造工艺中化学机械抛光（CMP）后的清洗工序中使用该清洗剂，从而获得以下效果（1）至（5）。(1) 可以充分去除 CMP 工序中使用的细颗粒（抛光剂）残留物、抛光金属产生的细颗粒（金属颗粒）、防腐剂等。(2) 可以充分去除（剥离）金属布线表面的涂膜（保护膜：抗氧化膜），该涂膜含有在 CMP 工艺中形成的防腐剂（如苯并三唑或喹啉二酸）与金属布线表面金属之间的络合物。(3) 在去除（剥离）涂膜后，可形成含有金属氧化物的氧化膜。(4) 即使在 CMP 后的清洗工序后离开基板，也能长期稳定地获得半导体基板，而不会影响金属布线表面（含有金属氧化物的氧化膜表面）的平整度。(5) 即使长期使用该清洗剂也不易变质。 本发明涉及一种用于具有金属配线的衬底的清洗剂，包括含有(A)具有含氮杂环的羧酸和(B)烷基羟胺且 pH 值为 10 或更高的水溶液，以及一种半导体衬底的清洗方法，其中包括使用该清洗剂。
• Vavon; Krajcinovic, Bulletin de la Societe Chimique de France, 1928, vol. <4> 43, p. 237
  作者：Vavon、Krajcinovic

  DOI：——

  日期：——