dipropylammonium fluoride | 97147-08-5

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: dipropylammonium fluoride
• 英文别名: dipropylazanium;fluoride
• CAS: 97147-08-5
• 化学式: C₆H₁₅N*FH
• 分子量: 121.198
• InChiKey: GCLZYIAWFUPTLN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.55
• 重原子数：
  8
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  12
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  四氟化锡(IV) 、 dipropylammonium fluoride 以 乙醇 为溶剂， 生成 pentafluoro-stannate(IV) (1-)
  参考文献：
  名称：

  Fluorine-19 Nuclear Magnetic Resonance Study of Some Pentafluorostannate Complexes

  摘要：

  DOI：

  10.1021/ic50027a031

文献信息

• PROCESS FOR PREPARING FLUORINATED 1,3-DIOXOLAN 2-ONE
  申请人：Koh Meiten

  公开号：US20110009644A1

  公开（公告）日：2011-01-13

  The present invention provides a process for preparing fluorinated 1,3-dioxolan-2-one by reacting a derivative of 1,3-dioxolan-2-one having halogen atom other than fluorine with an amine hydrofluoride in an organic solvent, and in this preparation process, fluorinated 1,3-dioxolane-2-on can be prepared in a short period of time by liquid-liquid reaction while maintaining high yield, by using a derivative of 1,3-dioxolan-2-one having halogen atom other than fluorine as a starting material and fluorinating the derivative with a fluorinating agent.

  本发明提供了一种制备氟代1,3-二氧杂环己烷-2-酮的方法，该方法通过在有机溶剂中将含有氟以外卤素原子的1,3-二氧杂环己烷-2-酮衍生物与氨基氟化物反应，可在短时间内通过液-液反应制备氟代1,3-二氧杂环戊烷-2-酮，同时保持高收率，通过使用含有氟以外卤素原子的1,3-二氧杂环己烷-2-酮衍生物作为起始物质，并使用氟化试剂对衍生物进行氟化。
• SEMICONDUCTOR SURFACE TREATING AGENT COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SURFACE USING THE SEMICONDUCTOR SURFACE TREATING AGENT COMPOSITION
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2249206A1

  公开（公告）日：2010-11-10

  An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.

  本发明的目的是提供一种半导体表面处理剂组合物，该组合物可在短时间内以低温轻松去除半导体器件等生产过程中的抗反射涂层，以及使用该组合物处理半导体表面的方法；进一步提供一种半导体表面处理剂组合物，该组合物不仅可同时去除抗反射涂层和抗蚀层，甚至还可去除蚀刻过程中产生的固化抗蚀层，以及使用该组合物处理半导体表面的方法。本发明的半导体表面处理剂组合物的特点是由一种在水中生成氟离子的化合物、一种碳自由基生成剂、水和可选的有机溶剂组成，本发明的半导体表面处理方法的特点是使用该组合物。
• PROCESSING AGENT COMPOSITION FOR SEMICONDUCTOR SURFACE AND METHOD FOR PROCESSING SEMICONDUCTOR SURFACE USING SAME
  申请人：Wako Pure Chemical Industries, Ltd.

  公开号：EP2475000A1

  公开（公告）日：2012-07-11

  The present invention is directed to provide a semiconductor surface treating agent composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent composition, comprising [I] a compound generating a fluorine ion in water, [11] a carbon radical generating agent, [111] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).

  本发明旨在提供一种半导体表面处理剂组合物，该组合物能够在半导体器件等的生产过程中在短时间内容易地剥离抗反射涂层、抗蚀层和固化抗蚀层，以及一种处理半导体表面的方法，其中包括使用该组合物。本发明涉及一种半导体表面处理剂组合物，包括[I]一种在水中生成氟离子的化合物、[11]一种碳自由基生成剂、[111]水、[IV]一种有机溶剂和[V]至少一种选自由通式[1]表示的羟胺和羟胺衍生物组成的组中的化合物，以及一种处理半导体表面的方法，包括使用该组合物： (其中 R1 代表直链、支链或环状 C1-6 烷基，或具有 1 至 3 个羟基的直链或支链 C1-4 取代烷基；R2 代表氢原子、直链、支链或环状 C1-6 烷基，或具有 1 至 3 个羟基的直链或支链 C1-4 取代烷基）。
• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: Sn: MVol.C1, 5.7.1, page 178 - 178
  作者：

  DOI：——

  日期：——
• US8828918B2
  申请人：——

  公开号：US8828918B2

  公开（公告）日：2014-09-09