空气稳定的n型有机场效应晶体管基于对4,9-二氢小号-indaceno [1,2 b:5,6- b ']二噻唑-4,9-二酮单位
摘要:
4,9-二氢-小号-indaceno [1,2 b:5,6- b ']二噻唑-4,9-二酮(IDD)被设计为一个新颖的带负电的单元,以及π共轭化合物(2C-合成含有TzPhTz的TzPhTz作为空气稳定的n型有机场效应晶体管(OFET)材料的候选材料。循环伏安法测量表明,IDD单元有助于降低最低的空分子轨道(LUMO)能量水平。2C-TzPhTz的X射线晶体学分析显示几乎是平面的分子几何形状和密集的分子堆积,这对电子传输是有利的。基于2C-TzPhTz的OFET表现出高达0.39 cm 2 V –1 s –1的高电子迁移率,这是五环二酮类材料中观察到的最高电子迁移率之一。顶部接触式OFET器件在环境条件下显示出操作稳定性和长期稳定性,这归因于低水平的LUMO能级和固态的致密堆积。此外,底部接触的OFET在空气暴露条件下也保持了超过0.1 cm 2 V –1 s –1的良好电子迁移率。我们证明了n型OFET对H
NITROGEN-CONTAINING FUSED RING COMPOUND, NITROGEN-CONTAINING FUSED RING POLYMER, ORGANIC THIN FILM, AND ORGANIC THIN FILM ELEMENT
申请人:Ie Yutaka
公开号:US20130041123A1
公开(公告)日:2013-02-14
Nitrogen-containing fused ring compound having at least one structural unit selected from the group consisting of a structural unit represented by the formula (1-1) and a structural unit represented by the formula (1-2).
Electron-Deficient Polycyclic π-System Fused with Multiple B←N Coordinate Bonds
作者:Yirui Cao、Congzhi Zhu、Maciej Barłóg、Kayla P. Barker、Xiaozhou Ji、Alexander J. Kalin、Mohammed Al-Hashimi、Lei Fang
DOI:10.1021/acs.joc.0c02052
日期:2021.2.5
An extensive polycyclic π-system with 23 fused rings is synthesized via a highly efficient borylation reaction, in which four B–N covalent bonds and four B←N coordinate bonds are formed in one pot. B←N coordinate bonds not only lock the backbone into a near-coplanar conformation but also decrease the LUMO energy level to around −3.82 eV, demonstrating the dual utility of this strategy for the synthesis
4,9-Dihydro-s-indaceno[1,2-b:5,6-b′]dithiazole-4,9-dione (IDD) was designed as a novel electronegative unit, and the π-conjugated compound (2C-TzPhTz) containing it was synthesized as a candidate for air-stablen-typeorganicfield-effecttransistor (OFET) materials. Cyclic voltammetry measurements revealed that the IDD unit contributes to lowering the lowest unoccupied molecular orbital (LUMO) energy
4,9-二氢-小号-indaceno [1,2 b:5,6- b ']二噻唑-4,9-二酮(IDD)被设计为一个新颖的带负电的单元,以及π共轭化合物(2C-合成含有TzPhTz的TzPhTz作为空气稳定的n型有机场效应晶体管(OFET)材料的候选材料。循环伏安法测量表明,IDD单元有助于降低最低的空分子轨道(LUMO)能量水平。2C-TzPhTz的X射线晶体学分析显示几乎是平面的分子几何形状和密集的分子堆积,这对电子传输是有利的。基于2C-TzPhTz的OFET表现出高达0.39 cm 2 V –1 s –1的高电子迁移率,这是五环二酮类材料中观察到的最高电子迁移率之一。顶部接触式OFET器件在环境条件下显示出操作稳定性和长期稳定性,这归因于低水平的LUMO能级和固态的致密堆积。此外,底部接触的OFET在空气暴露条件下也保持了超过0.1 cm 2 V –1 s –1的良好电子迁移率。我们证明了n型OFET对H
Indacenodithiazole-Ladder-Type Bridged Di(thiophene)-Difluoro-Benzothiadiazole-Conjugated Copolymers as Ambipolar Organic Field-Effect Transistors
作者:Maciej Barłóg、Xianhe Zhang、Ihor Kulai、Da Seul Yang、Dusan N. Sredojevic、Aritra Sil、Xiaozhou Ji、Kifah S. M. Salih、Hassan S. Bazzi、Hugo Bronstein、Lei Fang、Jinsang Kim、Tobin J. Marks、Xugang Guo、Mohammed Al-Hashimi
DOI:10.1021/acs.chemmater.9b03525
日期:2019.11.26
solubility. In the solid state, P1 does not exhibit a significant shift, while P3 shows a 27 nm redshift, thus illustrating the influence of the side chain. In the case of copolymers P1 and P2 having linear side chains, there is a clear effect of fluorination on the film morphology, while it is less pronounced in the case of polymers P3 and P4 having branched side chains. All copolymers P1–P4 have