申请人:——
公开号:US20010043992A1
公开(公告)日:2001-11-22
The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.
本发明提供了一种可用作抗反射涂层(ARC)聚合物的聚合物,包括该聚合物的ARC组合物,制备该聚合物的方法以及使用该聚合物的方法。本发明的聚合物在亚微米光刻工艺中特别有用,例如使用KrF(248 nm)或ArF(193 nm)激光作为光源。本发明的聚合物包含一种色团,能够吸收亚微米光刻工艺中使用的波长的光。因此,本发明的ARC显著降低或防止光的反射和由衍射和/或反射光引起的CD变形问题。本发明的ARC还显著降低或消除了立体波效应和反射凹痕。因此,本发明的聚合物可用于生产适用于64M、256M、1G、4G和16G DRAM半导体器件制造的稳定超细图案。此外,本发明的ARC显著提高了这种半导体器件的生产产量。