N,N'-Bis(tert.-butylamino)monosulfan | 21750-45-8

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: N,N'-Bis(tert.-butylamino)monosulfan
• 英文别名: N,N'-Sulfanediylbis(2-methylpropan-2-amine)；N-(tert-butylamino)sulfanyl-2-methylpropan-2-amine
• CAS: 21750-45-8
• 化学式: C₈H₂₀N₂S
• 分子量: 176.326
• InChiKey: IJLBHCSUFKFHQB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2
• 重原子数：
  11
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  49.4
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  N,N'-Bis(tert.-butylamino)monosulfan 以 正己烷 、 甲苯 为溶剂， 反应 2.0h， 生成 2,5-Di-tert-butyl-3,3,4,4-tetrachloro-[1,2,5,3,4]thiadiazadisilolidine
  参考文献：
  名称：

  Reactions of sulphur diimides with di- and tri-silanes: 15N and 29Si nuclear magnetic resonance study and the crystal structure of bis[tert-butyl(trichlorosilyl)amino]sulphane

  摘要：

  Sulphur diimides R1NSNR2 1a (R1 = R2 = Bu(t)), 1b (R1 = Bu(t), R2 = Me3Si) and 1c (R1 = R2 = Me3Si) react with tetrachloro-1,2-dimethyldisilane 2, hexachlorodisilane 3 and octachlorotrisilane 6 by cleavage of the Si-Si bond to give the corresponding diaminosulphanes (4, 5, 7) in quantitative yield. In the case of 6 only one of the two Si-Si bonds is cleaved. The reaction between 1b and 6 affords two isomers in a ratio close to 1:1 which suggests the intermediacy of a cyclic adduct prior to the intramolecular redox process. The products have been characterized by H-1, C-13, N-15 and Si-29 NMR spectroscopy in solution as well as by Si-29 cross polarization magic angle spinning NMR in the solid state. The crystal structure of (Cl3Si)Bu(t)NSNBu(t)(SiCl3) 5a (prepared from 1a and 3) has been determined: space group Pbcn (no. 60), with a = 2212.9(6), b = 1172.4(3), c = 2160.5(8) pm, and Z = 12.

  DOI：

  10.1039/dt9910002607

文献信息

• VAPOR DEPOSITION PRECURSOR COMPOUNDS AND PROCESS OF USE
  申请人：ENTEGRIS, INC.

  公开号：US20210388008A1

  公开（公告）日：2021-12-16

  Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O 2 and NH 3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

  提供的是一种等离子增强原子层沉积（PEALD）工艺，用于沉积耐刻蚀的SiOCN薄膜。这些薄膜提供了改善的生长速率、改善的阶梯覆盖和优异的耐湿法刻蚀和含O2和NH3共反应剂的沉积后等离子体处理的刻蚀抗性。这种PEALD工艺依靠一个或多个前体与等离子体曝光同时反应，沉积SiOCN的耐刻蚀薄膜。这些薄膜在沉积后和沉积后等离子体处理后均表现出对稀释水HF溶液的优异耐湿法蚀刻性能。因此，这些薄膜预计在器件制造和构建过程中显示出优异的稳定性。
• Haenssgen, D.; Patermann, C.; Plum, R., Zeitschrift fur Anorganische und Allgemeine Chemie
  作者：Haenssgen, D.、Patermann, C.、Plum, R.

  DOI：——

  日期：——
• [EN] ORGANOMETALLIC COMPOUNDS<br/>[FR] COMPOSÉS ORGANOMÉTALLIQUES
  申请人：PRAXAIR TECHNOLOGY INC

  公开号：WO2008002415A2

  公开（公告）日：2008-01-03

  [EN] This invention relates to organometallic compounds represented by the formula H_aM(NR₁ R₂)x(NR₃H)_y(NH₂)_z wherein M is a metal or metalloid, each of R₁, R₂ and R₃ is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y. is a value from 0 to 4,z is a value from 0 to 4, and a + x + y + z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.
  [FR] La présente invention porte sur des composés organométalliques représentés par la formule H_aM(NR₁ R₂)_x(NR₃H)_y(NH₂)_z où M est un métal ou un métalloïde, les R₁, R₂ et R₃ étant identiques ou différents et représentant chacun indépendamment un groupe hydrocarboné ou un groupe contenant un hétéroatome, a est une valeur de 0 à 3, x est une valeur de 0 à 3, y est une valeur de 0 à 4, z est une valeur de 0 à 4, et a + x + y + z est égal à l'état d'oxydation de M, à la condition qu'au moins l'un parmi y et z est une valeur d'au moins 1 ; l'invention concerne également un procédé de fabrication des composés organométalliques et un procédé pour obtenir un film ou un revêtement à partir de composés précurseurs organométalliques.