acryltriethoxysilane | 118943-60-5

• 分子结构分类: 有机化合物 - 有机金属化合物 - 有机类金属化合物
• 英文名称: acryltriethoxysilane
• 英文别名: 1-triethoxysilylprop-2-en-1-one
• CAS: 118943-60-5
• 化学式: C₉H₁₈O₄Si
• 分子量: 218.325
• InChiKey: IWOYOWJUHGQNBD-UHFFFAOYSA-N

物化性质

• 沸点：
  206.4±23.0 °C(Predicted)
• 密度：
  0.974±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.33
• 重原子数：
  14
• 可旋转键数：
  8
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.67
• 拓扑面积：
  44.8
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  acryltriethoxysilane 、 9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物 在 N,N-二甲基苯胺 、 过氧化苯甲酰 作用下， 以 甲苯 为溶剂， 生成
  参考文献：
  名称：

  KR2023/24043

  摘要：

  公开号：
• 作为产物：
  描述：

  三乙氧基氯硅烷 、 sodium 2-propenoate 在 氯化钠 作用下， 以 四氢呋喃 为溶剂， 生成 acryltriethoxysilane
  参考文献：
  名称：

  Dielectric materials and methods for integrated circuit applications

  摘要：

  提供一种集成电路器件，具有基板和电绝缘和电导材料区域，其中电绝缘材料是一种混合有机-无机材料，不需要或仅需要最小化的化学机械抛光，并且可以承受450℃或更高温度的后续加工步骤。

  公开号：

  US20090278254A1

文献信息

• Methods and compounds for making coatings, waveguides and other optical devices
  申请人：——

  公开号：US20030162985A1

  公开（公告）日：2003-08-28

  A compound of the general formula R 1 R 2 MR 4 R 5 is disclosed wherein R 1 and R 2 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R 1 and R 2 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, wherein R 4 and R 5 are independently an alkoxy group, OR 3 , or a halogen group, X, except where M is Si, R 4 and R 5 are both ethoxy groups or both chlorine groups, and R 1 and R 2 are perfluorinated groups. This compound formed can be further reacted to attach an additional organic R group, and/or hydrolyzed, alone or with one or more similar compounds, to form a material having a molecular weight of from 500 to 10,000, which material can be deposited on various substrates as a coating or deposited and patterned for a waveguide or other optical device components. Methods for making compounds of the general formula R 1 MR 4 R 5 R 6 are also disclosed.

  揭示了一种通用公式为R1R2MR4R5的化合物，其中R1和R2分别是芳基、烷基、烯基、环氧基或炔基，其中至少一个R1和R2是全氟化或部分氟化的，其中M选自周期表的14族元素，其中R4和R5分别是烷氧基、OR3或卤素基X，除非M是硅，否则R4和R5都是乙氧基或氯基，而R1和R2是全氟化基团。形成的这种化合物可以进一步反应以连接额外的有机R基团，并/或水解，单独或与一个或多个类似化合物一起，形成分子量为500至10,000的材料，该材料可以沉积在各种基底上作为涂层，或沉积并加工成波导或其他光学器件组件的图案。还揭示了制备通用公式为R1MR4R5R6的化合物的方法。
• Adhesion promoter and wetting agent
  申请人：——

  公开号：US20040115341A1

  公开（公告）日：2004-06-17

  An adhesion promoter for adhering a coating of a polymer, metal, metal oxide or fluorinated derivative thereof to an electrical or opto-electronic surface. The adhesion promoter is a hybrid organic-inorganic material which, in a preferred embodiment, includes silicon in the inorganic material.

  一种黏附促进剂，用于将聚合物、金属、金属氧化物或其氟化衍生物的涂层粘附到电气或光电表面上。该黏附促进剂是一种有机-无机杂化材料，其中在优选实施例中，无机材料中包括硅。
• Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
  申请人：Rantala T. Juha

  公开号：US20060131753A1

  公开（公告）日：2006-06-22

  An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm 3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm 3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

  提供了一种集成电路，包括基底和电气绝缘和电气导体材料的离散区域，其中电气绝缘材料是一种混合有机-无机材料，具有1.45克/厘米3或更高的密度和3.0或更低的介电常数。该集成电路可以通过以下方法制造：提供基底；在基底上形成电气绝缘和电气导体材料的离散区域；其中电气绝缘材料在基底上沉积后，在350℃或更低的温度下加热；并且在致密化后，电气绝缘材料具有1.45克/厘米3或更高的密度。还公开了一种制造集成电路的方法，包括使用电气导体材料和介电材料执行双刻蚀法，其中介电材料是直接光图案化的混合有机-无机材料。
• Hybrid organic -inorganic materials for waveguides, optical devices, and other applications
  申请人：——

  公开号：US20030235933A1

  公开（公告）日：2003-12-25

  Waveguides are disclosed (and other devices and materials including but not limited to hybrid organic-inorganic coatings, passivation materials, glob top materials, underfill materials, materials for IC and other applications, microlenses and any of a wide variety of optical devices) that benefit by being formed of a novel hybrid organic-inorganic material. In one embodiment of the invention, a method for making a waveguide includes: forming a lower cladding layer on a substrate; forming a core layer after the lower cladding layer; and forming an upper cladding layer after the core layer; wherein the lower cladding layer, core layer and/or upper cladding layer comprises a hybrid organic-inorganic material—that has many desirable properties relating to stability, hydrophobicity, roughness, optical absorbance, polarization dependent loss, among others.

  本发明公开了波导（以及其他设备和材料，包括但不限于混合有机-无机涂层、钝化材料、球形封装材料、填充材料、用于集成电路和其他应用的材料、微透镜和各种光学设备），这些设备和材料由新型混合有机-无机材料构成，因此具有许多有益特性。在本发明的一种实施方案中，制造波导的方法包括：在基板上形成下部包层；在下部包层之后形成芯层；在芯层之后形成上部包层；其中下部包层、芯层和/或上部包层包含具有许多有益特性的混合有机-无机材料，这些特性包括稳定性、疏水性、粗糙度、光学吸收、偏振依赖损耗等。
• Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits
  申请人：——

  公开号：US20040002617A1

  公开（公告）日：2004-01-01

  A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R 1 R 2 R 3 SiR 4 , wherein R 1 , R 2 , R 3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R 4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R 1 R 2 R 4 MR 5 , wherein R 1 , R 2 and R 4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R 1 , R 2 and R 4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R 5 is either an alkoxy group, OR 3 , or a halogen (X).

  本发明公开了一种制造集成电路的方法，包括在基板上沉积交替区域的电导材料和混合有机无机介电材料，其中通过水解多种前体物质形成由硅氧骨架组成并具有有机取代基结合的混合有机无机材料形成介电材料区域，然后在基板上沉积混合有机无机材料，去除所选区域的混合有机无机材料，并在所选区域沉积电导材料，其中前体物质之一是具有一般式R1R2R3SiR4的化合物，其中R1、R2、R3分别与Si结合，并且独立地是芳基、交联基或具有1-14个碳的烷基，而R4选自具有烷氧基、酰氧基、—OH基或卤素的群。本发明还公开了一种在基板上形成混合有机无机层的方法，包括将一种选择自四烷氧基硅烷、三烷氧基硅烷、三氯硅烷、二烷氧基硅烷和二氯硅烷的硅烷与一种具有一般式R1R2R4MR5的化合物水解，其中R1、R2和R4独立地是芳基、烷基、烯基、环氧基或炔基，其中至少有一个R1、R2和R4是完全或部分氟化的，M选自周期表第14族元素，而R5是烷氧基、OR3或卤素（X）。