RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
申请人:Tokyo Ohka Kogyo Co., Ltd.
公开号:US20130115555A1
公开(公告)日:2013-05-09
There are provided a method of forming a resist pattern includes: a step (
1
) in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step (
2
) in which the resist film
2
is subjected to exposure; a step (
3
) in which baking is conducted after the step (
2
); and a step (
4
) in which the resist film
2
is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion
2
b
of the resist film
2
has been dissolved and removed, and the resist composition used in the step (
1
).
RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND NOVEL COMPOUND
申请人:Tokyo Ohka Kogyo Co., Ltd.
公开号:US20130177854A1
公开(公告)日:2013-07-11
A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, R
1
represents H, OH, halogen atom, alkoxy group, hydrocarbon group or nitro group; m represents 0-4; n represents 0-3; Rx represents H or hydrocarbon group; X
1
represents divalent linking group; X
2
represents H or hydrocarbon group; Y represents single bond or C(O); A represents alkylene group which may be substituted with oxygen atom, carbonyl group or alkylene group which may have fluorine atom; Q
1
and Q
2
represents F or fluorinated alkyl group; and W
+
represents primary, secondary or tertiary ammonium coutercation which exhibits pKa smaller than pKa of H
2
N
+
(X
2
)—X
1
—Y—O-A-C(Q
1
)(Q
2
)—SO
3
−
generated by decomposition upon exposure].
US8900795B2
申请人:——
公开号:US8900795B2
公开(公告)日:2014-12-02
US9029070B2
申请人:——
公开号:US9029070B2
公开(公告)日:2015-05-12
O-acyl derivatives of cyclopentanone and cycloheptanone oximes
作者:N. A. Zhukovskaya、E. A. Dikusar
DOI:10.1134/s1070428010020065
日期:2010.2
By acylation of cyclopentanone and cycloheptanone oximes with carboxylic acids anhydrides or chlorides new esters were obtained of cyclopentanone and cycloheptanone oximes and their spectral characteristics were investigated.