cycloheptanone O-(1-adamantyl)carbonyloxime | 1240949-50-1

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: cycloheptanone O-(1-adamantyl)carbonyloxime
• 英文别名: (cycloheptylideneamino) adamantane-1-carboxylate
• CAS: 1240949-50-1
• 化学式: C₁₈H₂₇NO₂
• 分子量: 289.418
• InChiKey: PUHVIBRQUWPWPR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.4
• 重原子数：
  21
• 可旋转键数：
  3
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  38.7
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  环庚酮肟 、 金刚烷酰氯 在 吡啶 作用下， 以 正己烷 为溶剂， 以91%的产率得到cycloheptanone O-(1-adamantyl)carbonyloxime
  参考文献：
  名称：

  环戊酮和环庚酮肟的O-酰基衍生物

  摘要：

  通过用羧酸酐或氯化物酰化环戊酮和环庚酮肟，得到了环戊酮和环庚酮肟的新酯，并研究了它们的光谱特性。

  DOI：

  10.1134/s1070428010020065

文献信息

• RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20130115555A1

  公开（公告）日：2013-05-09

  There are provided a method of forming a resist pattern includes: a step ( 1 ) in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step ( 2 ) in which the resist film 2 is subjected to exposure; a step ( 3 ) in which baking is conducted after the step ( 2 ); and a step ( 4 ) in which the resist film 2 is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion 2 b of the resist film 2 has been dissolved and removed, and the resist composition used in the step ( 1 ).
• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND NOVEL COMPOUND
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20130177854A1

  公开（公告）日：2013-07-11

  A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, R 1 represents H, OH, halogen atom, alkoxy group, hydrocarbon group or nitro group; m represents 0-4; n represents 0-3; Rx represents H or hydrocarbon group; X 1 represents divalent linking group; X 2 represents H or hydrocarbon group; Y represents single bond or C(O); A represents alkylene group which may be substituted with oxygen atom, carbonyl group or alkylene group which may have fluorine atom; Q 1 and Q 2 represents F or fluorinated alkyl group; and W + represents primary, secondary or tertiary ammonium coutercation which exhibits pKa smaller than pKa of H 2 N + (X 2 )—X 1 —Y—O-A-C(Q 1 )(Q 2 )—SO 3 − generated by decomposition upon exposure].
• US8900795B2
  申请人：——

  公开号：US8900795B2

  公开（公告）日：2014-12-02
• US9029070B2
  申请人：——

  公开号：US9029070B2

  公开（公告）日：2015-05-12