Novolac resin-containing resist underlayer film-forming composition using bisphenol aldehyde
申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
公开号:US10017664B2
公开(公告)日:2018-07-10
Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1):
The obtained resin may have a unit structure of Formula (2):
Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent. Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.
본 발명은 방향족 하이드록시기를 포함하는 신규한 화합물 및 광경화성 화합물, 광 개시제 및 용제를 포함하는 광경화성 수지 조성물에 있어서, 상기 광경화성 화합물은 1개 이상의 방향족 하이드록시기 및 2개 이상의 광경화성 비닐기를 포함하는 화합물을 포함하는 것을 특징으로 하는 광경화성 수지 조성물에 관한 것이다.
The present invention is a siloxane-based resin composition including a siloxane-based resin and an imidosilane compound having a specific structure. Moreover, the present invention is a siloxane-based resin composition including a siloxane-based resin which is a reactive product to be obtained by hydrolyzing an alkoxysilane compound and an imidosilane compound having a specific structure and then making the resulting hydrolysate undergo a condensation reaction. According to the present invention, it is possible to form a cured film excellent in adhesion.
NOVOLAC RESIN-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION USING BISPHENOL ALDEHYDE
申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
公开号:US20160068709A1
公开(公告)日:2016-03-10
Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1):
The obtained resin may have a unit structure of Formula (2):
Ar
1
and Ar
2
each are C
6-40
aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent.
Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.
Large-scale preparation of branched novolacs by the acid catalyzed, exothermic condensation of methylol-reactive phenols with polymethylol diphenols is made practical by first carrying out the reaction on a scale which permits temperature control simply by cooling and then separately adding more of the premixed reactants and the catalyst at rates such that the temperature of the reaction mixture can readily be controlled.