Desoxycholsaeure-methylester | 1912-56-7

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 类固醇和类固醇衍生物
• 英文名称: Desoxycholsaeure-methylester
• 英文别名: methyl 4-[(3R,10S,12S,13R)-3,12-dihydroxy-10,13-dimethyl-2,3,4,5,6,7,8,9,11,12,14,15,16,17-tetradecahydro-1H-cyclopenta[a]phenanthren-17-yl]pentanoate
• CAS: 1912-56-7；1912-65-8；2569-05-3；2934-50-1；3245-38-3；20231-66-7；28050-36-4；60103-19-7；60103-20-0；60103-21-1；80225-61-2；81702-91-2
• 化学式: C₂₅H₄₂O₄
• 分子量: 406.606
• InChiKey: ZHUOOEGSSFNTNP-YCTDYWRUSA-N

物化性质

• 熔点：
  140 °C
• 沸点：
  507.6±35.0 °C(Predicted)
• 密度：
  1.089±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  5.2
• 重原子数：
  29
• 可旋转键数：
  5
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.96
• 拓扑面积：
  66.8
• 氢给体数：
  2
• 氢受体数：
  4

文献信息

• Pattern forming method, composition for forming protective film, method for manufacturing electronic device, and electronic device
  申请人：FUJIFILM Corporation

  公开号：US10175578B2

  公开（公告）日：2019-01-08

  A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

  一种图案形成方法包括将感光或感辐射树脂组合物涂布到基底上以形成感光或感辐射胶片，将用于形成保护膜的组合物涂布到感光或感辐射胶片上以形成保护膜，曝光覆盖有保护膜的感光或感辐射胶片、使用含有有机溶剂的显影剂对曝光的感光胶片或辐射敏感胶片进行显影，其中保护膜含有一种化合物 (A)，该化合物包括至少一个选自由醚键、硫醚键、羟基、硫醇基、羰基键和酯键组成的基团或键，以及一种树脂 (X)。
• Pattern forming method, resist pattern, and process for producing electronic device
  申请人：FUJIFILM Corporation

  公开号：US10578968B2

  公开（公告）日：2020-03-03

  The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

  本发明的目的是提供一种能够提供良好的DOF和EL的图案形成方法、一种由该图案形成方法形成的抗蚀剂图案，以及一种制造电子设备的方法，包括该图案形成方法。本发明的图案形成方法包括步骤 a：在基板上涂布活性光敏或辐射敏感树脂组合物以形成抗蚀剂薄膜；步骤 b：在抗蚀剂薄膜上涂布用于形成上层薄膜的组合物以在抗蚀剂薄膜上形成上层薄膜；步骤 c：曝光形成有上层薄膜的抗蚀剂薄膜；步骤 d：使用显影剂显影曝光的抗蚀剂薄膜以形成图案，其中活性光敏或辐射敏感树脂组合物包含疏水性树脂。
• PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170199461A1

  公开（公告）日：2017-07-13

  The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.
• PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170176862A1

  公开（公告）日：2017-06-22

  A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).
• PATTERN FORMING METHOD, COMPOSITION FOR FORMING UPPER LAYER FILM, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170184970A1

  公开（公告）日：2017-06-29

  Provided are a pattern forming method capable of providing good DOF, EL, and watermark defect performance, a resist pattern formed by the pattern forming method, a composition for forming an upper layer film, used in the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to forming a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which a receding contact angle of water on a surface of the upper layer film is 80° or more.