It is an object of the present invention to provide a cleaning solution for removing carbon-incorporated silicon oxide (SiOC) from the surface of a wafer in a step of producing a wafer having a material comprising the SiOC, and a cleaning method of using the same. The cleaning solution of the present invention comprises 2% by mass to 30% by mass of a fluorine compound, 0.0001% by mass to 20% by mass of a specific cationic surfactant that is an ammonium salt or an amine, and water, and has a pH value of 0 to 4.
本发明的目的是提供一种清洗液,用于在生产具有包含氧化
硅(SiOC)的材料的晶片的步骤中去除晶片表面的碳结合氧化
硅(SiOC),以及使用该清洗液的清洗方法。本发明的清洗液由质量分数为 2% 至 30% 的
氟化合物、质量分数为 0.0001% 至 20% 的特定
阳离子表面活性剂(
铵盐或胺)和
水组成,pH 值为 0 至 4。