In the present invention, the concentration of dissolved oxygen in the resist stripping liquid is limited to 3 ppm or lower. Using the resist stripping liquid having such a low dissolved oxygen concentration, resist residues are removed from a substrate containing copper and/or a copper alloy without causing the corrosion of copper.
在本发明中,抗蚀剂剥离液中的溶解氧浓度限制在 3 ppm 或更低。使用具有如此低溶解氧浓度的光刻胶剥离液,可从含有
铜和/或
铜合
金的基底上去除光刻胶残留物,而不会造成
铜腐蚀。