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[Butylamino-(2-hydroxy-phenyl)-methyl]-phosphonic acid diethyl ester | 61146-32-5

中文名称
——
中文别名
——
英文名称
[Butylamino-(2-hydroxy-phenyl)-methyl]-phosphonic acid diethyl ester
英文别名
2-[Butylamino(diethoxyphosphoryl)methyl]phenol
[Butylamino-(2-hydroxy-phenyl)-methyl]-phosphonic acid diethyl ester化学式
CAS
61146-32-5
化学式
C15H26NO4P
mdl
——
分子量
315.35
InChiKey
VSESINPOYJDFIR-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.8
  • 重原子数:
    21
  • 可旋转键数:
    10
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.6
  • 拓扑面积:
    67.8
  • 氢给体数:
    2
  • 氢受体数:
    5

文献信息

  • Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
    申请人:BASF SE
    公开号:EP2428541A1
    公开(公告)日:2012-03-14
    An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
    发现了一种性抛光组合物,所述性抛光组合物包括 (A) 至少一种磨料颗粒,分散在不含组分(B)的介质中时带正电,从电泳迁移率看,其 pH 值在 3 至 9 之间; (B) 至少一种溶性聚合物,选自由线性和支链环氧亚烷基均聚物和共聚物组成的 组;以及 (C) 至少一种阴离子磷酸盐分散剂; 以及一种利用该性抛光组合物对电气、机械和光学设备的基底材料进行抛光的工艺。
  • Method of polishing a silicon-containing dielectric
    申请人:Carter W. Phillip
    公开号:US20060144824A1
    公开(公告)日:2006-07-06
    The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pK a of about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.
    本发明涉及一种对含介电层进行抛光的方法,该方法涉及使用一种化学机械抛光系统,该系统包括(a)一种无机磨料、(b)一种抛光添加剂和(c)一种液体载体,其中抛光组合物的 pH 值约为 4 至 6。 a 为约 4 至约 9 的官能团,该官能团选自由芳胺、基醇、脂肪胺、杂环胺、羟酸、羧酸、环状单羧酸、不饱和单羧酸、取代、磺酰胺、醇、其盐及其组合组成的组。本发明还涉及化学机械抛光系统,其中无机磨料为
  • Readily deinkable toners
    申请人:Carter W. Phillip
    公开号:US20060196848A1
    公开(公告)日:2006-09-07
    The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pK a of about 3 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.
    本发明涉及一种对含介电层进行抛光的方法,该方法涉及使用一种化学机械抛光系统,该系统包括(a)一种无机磨料、(b)一种抛光添加剂和(c)一种液体载体,其中抛光组合物的 pH 值约为 4 至 6。 a 为约 3 至约 9 的官能团,该官能团选自由芳胺、基醇、脂肪胺、杂环胺、羟酸、羧酸、环状单羧酸、不饱和单羧酸、取代、磺酰胺、醇、其盐及其组合组成的组。本发明还涉及化学机械抛光系统,其中无机磨料为
  • METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC
    申请人:Cabot Microelectronics Corporation
    公开号:EP1601735A1
    公开(公告)日:2005-12-07
  • AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS
    申请人:BASF SE
    公开号:EP2614122A1
    公开(公告)日:2013-07-17
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