4,4'-双[二(3,5-二甲苯基)氨基]-4''-苯基三苯胺 | 249609-49-2

• 分子结构分类: 有机化合物 - 有机氮化合物
• 中文名称: 4,4'-双[二(3,5-二甲苯基)氨基]-4''-苯基三苯胺
• 英文名称: 4,4'-Bis[di(3,5-xylyl)amino]-4''-phenyltriphenylamine
• 英文别名: 4-N,4-N-bis(3,5-dimethylphenyl)-1-N-[4-(N-(3,5-dimethylphenyl)-3,5-dimethylanilino)phenyl]-1-N-(4-phenylphenyl)benzene-1,4-diamine
• CAS: 249609-49-2
• 化学式: C₅₆H₅₃N₃
• 分子量: 768.0
• InChiKey: XPHQVAAGYDLYOC-UHFFFAOYSA-N

物化性质

• 沸点：
  871.0±65.0 °C(Predicted)
• 密度：
  1.132±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  16.2
• 重原子数：
  59
• 可旋转键数：
  10
• 环数：
  8.0
• sp3杂化的碳原子比例：
  0.14
• 拓扑面积：
  9.7
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• ORDINARY-TEMPERATURE-PHOSPHORESCENT ORGANIC MATERIAL, REVERSIBLY THERMOSENSITIVE RECORDING MATERIAL, REVERSIBLY THERMOSENSITIVE RECORDING MEDIUM, AND METHOD OF RECORDING IN REVERSIBLY THERMOSENSITIVE RECORDING MEDIUM
  申请人：National University Corporation Tokyo University of Agriculture and Technology

  公开号：EP2223985B1

  公开（公告）日：2013-07-31
• Hole-trapping materials for improved OLED efficiency
  申请人：Jarikov V. Viktor

  公开号：US20060008672A1

  公开（公告）日：2006-01-12

  An organic light-emitting device includes a light-emitting layer including a host, a dopant, and a hole-trapping material, wherein the hole-trapping material is provided at 0.01 to less than 5% by volume relative to the light-emitting layer volume, has an oxidation potential that is selected so that it is less than the oxidation potential of the host in order to serve as a hole trap, has an oxidation potential that is selected so as to avoid formation of a certain charge transfer complex between the hole-trapping material and the host if the charge transfer complex causes a reduction in the electroluminescent efficiency of the dopant, and has an oxidation potential that is selected so as to avoid formation of the charge transfer complex between the hole-trapping material and the dopant.
• ORGANIC THIN FILM TRANSISTOR
  申请人：Nakamura Hiroaki

  公开号：US20100283041A1

  公开（公告）日：2010-11-11

  An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.
• US7504163B2
  申请人：——

  公开号：US7504163B2

  公开（公告）日：2009-03-17
• US8243113B2
  申请人：——

  公开号：US8243113B2

  公开（公告）日：2012-08-14