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4,5,7-三甲氧基-2-萘羧酸 | 77729-61-4

中文名称
4,5,7-三甲氧基-2-萘羧酸
中文别名
——
英文名称
4,5,7-trimethoxy-2-naphthoic acid
英文别名
4,5,7-Trimethoxy-2-naphthalenecarboxylic acid;4,5,7-trimethoxynaphthalene-2-carboxylic acid
4,5,7-三甲氧基-2-萘羧酸化学式
CAS
77729-61-4
化学式
C14H14O5
mdl
——
分子量
262.262
InChiKey
VTMFLNIXPOVRCE-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.6
  • 重原子数:
    19
  • 可旋转键数:
    4
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.21
  • 拓扑面积:
    65
  • 氢给体数:
    1
  • 氢受体数:
    5

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量
  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    4,5,7-三甲氧基-2-萘羧酸basic copper carbonate powder 作用下, 以 喹啉 为溶剂, 反应 1.0h, 以80%的产率得到1,3,8-三甲氧基萘
    参考文献:
    名称:
    Cameron, Donald W.; Feutrill, Geoffrey I.; Pannan, Linda J. H., Australian Journal of Chemistry, 1980, vol. 33, # 11, p. 2531 - 2541
    摘要:
    DOI:
  • 作为产物:
    描述:
    4,5,7-三甲氧基-2-萘羧酸甲酯氢氧化钾 作用下, 以 乙醇 为溶剂, 反应 4.0h, 以90%的产率得到4,5,7-三甲氧基-2-萘羧酸
    参考文献:
    名称:
    Cameron, Donald W.; Feutrill, Geoffrey I.; Pannan, Linda J. H., Australian Journal of Chemistry, 1980, vol. 33, # 11, p. 2531 - 2541
    摘要:
    DOI:
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文献信息

  • CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
    申请人:OSAKA UNIVERSITY
    公开号:US20170052449A1
    公开(公告)日:2017-02-23
    A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).
    一种图案形成方法包括将一种化学放大型光刻胶材料制成的感光树脂组成物的预定区域图案暴露于第一种放射性射线中,该放射性射线是电离辐射或波长不大于400 nm的非电离辐射。图案化暴露的光刻胶材料膜被洪水式暴露于第二种放射性射线中,该放射性射线是波长大于图案化暴露的非电离辐射的波长和大于200 nm的非电离辐射。该化学放大型光刻胶材料包括基础组分和能够在暴露时生成辐射敏感的敏化剂和酸的生成组分。生成组分包括辐射敏感的敏化剂生成剂。辐射敏感的敏化剂生成剂包括由式(A)表示的化合物。
  • Chemically amplified resist material and resist pattern-forming method
    申请人:JSR CORPORATION
    公开号:US10018911B2
    公开(公告)日:2018-07-10
    A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.
    一种化学放大抗蚀剂材料包括一种在酸的作用下能溶于或不溶于显影液的聚合物成分,以及一种在曝光时能产生辐射敏感敏化剂和酸的生成成分。生成组件中的辐射敏感性酸和敏化剂生成剂或辐射敏感性酸生成剂包括辐射敏感性第一化合物和辐射敏感性第二化合物。第一化合物包括第一鎓阳离子和第一阴离子,第二化合物包括第二鎓阳离子和不同于第一阴离子的第二阴离子。第一鎓阳离子还原成自由基时释放的能量和第二鎓阳离子还原成自由基时释放的能量均小于 5.0 eV。
  • Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
    申请人:TOKYO ELECTRON LIMITED
    公开号:US10025187B2
    公开(公告)日:2018-07-17
    A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).
    根据本发明,一种光敏化学放大型抗蚀剂材料用于两阶段曝光光刻工艺,它包含(1)可显影碱成分和(2)通过曝光产生光敏剂和酸的成分。在由(a)酸-光敏剂发生器、(b)光敏剂前体和(c)光酸发生器组成的三个组件中,上述组件只包含(a)组件、任意两个组件或(a)至(c)的所有组件。
  • Cameron, Donald W.; Feutrill, Geoffrey I.; Pannan, Linda J. H., Australian Journal of Chemistry, 1980, vol. 33, # 11, p. 2531 - 2541
    作者:Cameron, Donald W.、Feutrill, Geoffrey I.、Pannan, Linda J. H.
    DOI:——
    日期:——
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