1,5-Bis-(triethylammonium)-pentan | 83524-34-9

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 1,5-Bis-(triethylammonium)-pentan
• 英文别名: Triethyl-[5-(triethylazaniumyl)pentyl]azanium
• CAS: 83524-34-9
• 化学式: C₁₇H₄₀N₂
• 分子量: 272.518
• InChiKey: NAOPLBVQLUZMQA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.6
• 重原子数：
  19
• 可旋转键数：
  12
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• A Process for Making Molecular Sieves
  申请人：EXXONMOBIL CHEMICAL PATENTS INC.

  公开号：US20160090308A1

  公开（公告）日：2016-03-31

  The invention relates to a process for preparing molecular sieves, such as ZSM-57, using one or more structure directing agents selected from the group consisting of N 1 ,N 1 ,N 5 ,N 5 -tetraethyl-N 1 ,N 5 -dimethylpentane-1,5-diamininum, 1-ethyl-1-(5-(1-methylpiperidin-1-ium-1-yl)pentyl)piperidin-1-ium, 1,1′-(hexane-1,6-diyl)bis(1-ethylpiperidin-1-ium), and 1,1-diethylpyrrolidin-1-ium.

  本发明涉及一种使用选自N1，N1，N5，N5-四乙基-N1，N5-二甲基戊烷-1，5-二胺盐、1-乙基-1-(5-(1-甲基哌啶-1-ium-1-yl)戊基)哌啶-1-ium、1,1'-(己烷-1,6-二基)双(1-乙基哌啶-1-ium)和1,1-二乙基吡咯烷-1-ium中的一种或多种结构指向剂制备分子筛，例如ZSM-57的方法。
• POLISHING LIQUID
  申请人：KAMIMURA Tetsuya

  公开号：US20080203354A1

  公开（公告）日：2008-08-28

  The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.
• POLISHING LIQUID AND POLISHING METHOD USING THE SAME
  申请人：Kamimura Tetsuya

  公开号：US20090087989A1

  公开（公告）日：2009-04-02

  The invention provides a polishing liquid used for chemical mechanical polishing during planarization of a semiconductor integrated circuit, having at least: a benzotriazole compound (A) represented by the following Formula (1); an acid (B); and a water-soluble polymer (C). The invention further provides a polishing method for planarizing a semiconductor integrated circuit, the polishing method includes at least essentially chemically and mechanically polishing a barrier layer of the semiconductor integrated circuit using the polishing liquid. In Formula (1), each of R 01 to R 05 independently represents a hydrogen atom or an alkyl group, and at least one of R 01 to R 05 represents an alkyl group.
• Polishing liquid and polishing method
  申请人：Saie Toshiyuki

  公开号：US20090215270A1

  公开（公告）日：2009-08-27

  A polishing liquid is provided which has good storage stability and is capable of inhibiting generation of scratching caused by aggregation of solid abrasive grains or the like during use. A polishing method using the polishing liquid is also provided. The polishing liquid includes: (a) an aqueous solution A including colloidal silica particles in an amount of from 5 mass % to 40 mass % with respect to the total mass of the aqueous solution A, and having a pH of from 1 to 7; and (b) an aqueous solution B including a quaternary ammonium cation, wherein the aqueous solution A and the aqueous solution B are separately prepared and mixed to provide the polishing liquid immediately before used in polishing.
• Polishing slurry
  申请人：Yamada Tooru

  公开号：US20090311864A1

  公开（公告）日：2009-12-17

  A polishing slurry used in chemical mechanical polishing of a barrier layer and an interlayer dielectric film in a semiconductor integrated circuit includes an abrasive, an oxidizer, an anticorrosive, an acid, a surfactant and an inclusion compound. The polishing slurry has a pH of less than 5. The resulting polishing slurry contains a solid abrasive used in barrier CMP for polishing a barrier layer made of a metallic barrier material, has excellent storage stability, achieves a good polishing rate in various films to be polished such as the barrier layer, and is capable of independently controlling the polishing rate with respect to the various films to be polished while further suppressing agglomeration of the abrasive particles.