Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
申请人:BASF SE
公开号:US10899945B2
公开(公告)日:2021-01-26
Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.
A series of phenylacetic acid derivatives was discovered as CRTH2 antagonists. Modification of the series led to compounds that are also antagonists of DP. Since activation of CRTH2 and DP are believed to play key roles in mediating responses of asthma and other immune diseases, this series was optimized to increase the dual antagonistic activities and improve pharmacokinetic properties. These efforts led to selection of AMG 009 as a clinical candidate. (C) 2009 Elsevier Ltd. All rights reserved.
ANDREINI, F.;BIAGI, G.;GIORGI, I.;LIVI, O.;SCARTONI, V., FARMACO, 44,(1989) N, C. 831-841
作者:ANDREINI, F.、BIAGI, G.、GIORGI, I.、LIVI, O.、SCARTONI, V.
DOI:——
日期:——
USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES