diethyl-bis-(2-hydroxy-ethyl)-ammonium; hydroxide | 25257-90-3

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: diethyl-bis-(2-hydroxy-ethyl)-ammonium; hydroxide
• 英文别名: Diaethyl-bis-(2-hydroxy-aethyl)-ammonium; Hydroxid；Diaethyl-bis-(2-hydroxy-aethyl)-ammoniumhydroxyd；Diethyl-bis(2-hydroxyethyl)azanium;hydroxide
• CAS: 25257-90-3
• 化学式: C₈H₂₀NO₂*HO
• 分子量: 179.26
• InChiKey: MYRLVAHFNOAIAI-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  -0.35
• 重原子数：
  12
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  41.5
• 氢给体数：
  3
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  环氧乙烷 、 alkaline earth salt of/the/ methylsulfuric acid 在 水 作用下， 生成 diethyl-bis-(2-hydroxy-ethyl)-ammonium; hydroxide
  参考文献：
  名称：

  US2173069

  摘要：

  公开号：

文献信息

• CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
  申请人：OSAKA UNIVERSITY

  公开号：US20170052449A1

  公开（公告）日：2017-02-23

  A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

  一种图案形成方法包括将一种化学放大型光刻胶材料制成的感光树脂组成物的预定区域图案暴露于第一种放射性射线中，该放射性射线是电离辐射或波长不大于400 nm的非电离辐射。图案化暴露的光刻胶材料膜被洪水式暴露于第二种放射性射线中，该放射性射线是波长大于图案化暴露的非电离辐射的波长和大于200 nm的非电离辐射。该化学放大型光刻胶材料包括基础组分和能够在暴露时生成辐射敏感的敏化剂和酸的生成组分。生成组分包括辐射敏感的敏化剂生成剂。辐射敏感的敏化剂生成剂包括由式(A)表示的化合物。
• Process for the production of inorganic-organic foams
  申请人：Mobay Chemical Corporation

  公开号：EP0056145A1

  公开（公告）日：1982-07-21

  The instant invention is directed to a process for the production of inorganic-organic foams comprising reacting an organic, nonionic hydrophilic polyisocyanate with an aqueous alkali metal silicate in the presence of a catalyst and a blowing agent, characterized in that said aqueous alkali metal silicate contains from 0.1 to 15% by weight, based on the weight of the aqueous alkali metal silicate, of a compound of the formula: wherein A is N, P or S, wherein R, R', R" und R''' may be the same or different and are allyl, vinyl, C, to C17 alkyl or mono- or polyhydroxy substituted alkyl, C6 to C10 aryl or mono- or polyhydroxy substituted aryl, C7 to C22 aralkyl or mono- or polyhydroxy substituted aralkyl, or C7 to C22 alkaryl or mono- or polyhydroxy substituted alkaryl, wherein x is O when A is S, wherein x is 1 when A is N or P, and wherein B ist OH, halogen or OR"" wherein R'''' represents C, to C,2 alkyl, with the proviso that when A is S, B is not OR''''.

  本发明涉及一种生产无机-有机泡沫塑料的工艺，包括在催化剂和发泡剂存在下，使有机非离子亲水性多异氰酸酯与水基碱金属硅酸盐反应，其特征在于，所述水基碱金属硅酸盐含有以水基碱金属硅酸盐重量为基准，按重量计0.1%至15%的式化合物： 其中 A 是 N、P 或 S、 其中 R、R'、R "和 R'''可以相同或不同，并且是烯丙基、乙烯基、C, 至 C17 烷基或单羟基或多羟基取代的烷基、C6 至 C10 芳基或单羟基或多羟基取代的芳基、C7 至 C22 芳烷基或单羟基或多羟基取代的芳烷基，或 C7 至 C22 芳烷基或单羟基或多羟基取代的芳烷基、 其中当 A 为 S 时，x 为 O 当 A 为 N 或 P 时，x 为 1，以及 其中 B 是 OH、卤素或 OR""，其中 R'''' 代表 C,至 C,2 烷基，但 A 为 S 时，B 不是 OR''''。
• AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
  申请人：JSR Corporation

  公开号：EP2131389A1

  公开（公告）日：2009-12-09

  A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M- represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

  一种化学机械抛光水分散液包括：(A) 胶体二氧化硅，其平均粒径根据 BET 法测定的比表面积计算为 10 至 60 纳米；(B) 有机酸，其一个分子中含有两个或两个以上的羧基和一个或一个以上的羟基；(C) 季铵化合物，其通式如下(1)、 其中 R1 至 R4 分别代表烃基，M- 代表阴离子，化学机械抛光水分散液的 pH 值为 3 至 5。
• Chemically amplified resist material and resist pattern-forming method
  申请人：JSR CORPORATION

  公开号：US10018911B2

  公开（公告）日：2018-07-10

  A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.

  一种化学放大抗蚀剂材料包括一种在酸的作用下能溶于或不溶于显影液的聚合物成分，以及一种在曝光时能产生辐射敏感敏化剂和酸的生成成分。生成组件中的辐射敏感性酸和敏化剂生成剂或辐射敏感性酸生成剂包括辐射敏感性第一化合物和辐射敏感性第二化合物。第一化合物包括第一鎓阳离子和第一阴离子，第二化合物包括第二鎓阳离子和不同于第一阴离子的第二阴离子。第一鎓阳离子还原成自由基时释放的能量和第二鎓阳离子还原成自由基时释放的能量均小于 5.0 eV。
• Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
  申请人：TOKYO ELECTRON LIMITED

  公开号：US10025187B2

  公开（公告）日：2018-07-17

  A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

  根据本发明，一种光敏化学放大型抗蚀剂材料用于两阶段曝光光刻工艺，它包含(1)可显影碱成分和(2)通过曝光产生光敏剂和酸的成分。在由(a)酸-光敏剂发生器、(b)光敏剂前体和(c)光酸发生器组成的三个组件中，上述组件只包含(a)组件、任意两个组件或(a)至(c)的所有组件。