N-[3-(2,4-dioxo-3,4,5,6,7,8-hexahydro-1(2H)-quinazolinyl)cyclohexyl]-4-nitrobenzenesulphonamide | 390765-50-1

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 二氮杂萘
• 英文名称: N-[3-(2,4-dioxo-3,4,5,6,7,8-hexahydro-1(2H)-quinazolinyl)cyclohexyl]-4-nitrobenzenesulphonamide
• 英文别名: N-[3-(2,4-dioxo-5,6,7,8-tetrahydroquinazolin-1-yl)cyclohexyl]-4-nitrobenzenesulfonamide
• CAS: 390765-50-1
• 化学式: C₂₀H₂₄N₄O₆S
• 分子量: 448.5
• InChiKey: WAESWJJTDYVUPW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.2
• 重原子数：
  31
• 可旋转键数：
  4
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  150
• 氢给体数：
  2
• 氢受体数：
  7

文献信息

• Substituted amidoalkyl-uracils and their use
  申请人：——

  公开号：US20030022905A1

  公开（公告）日：2003-01-30

  Novel amidoalkyl-uracil derivatives of the formula (I) 1 a process for their preparation and their use as medicaments for the prophylaxis and/or treatment of disorders are described.

  本文描述了公式（I）的新型酰胺基烷基尿嘧啶衍生物的制备方法以及它们作为预防和/或治疗疾病的药物的用途。
• Dieletric thin films from fluorinated benzocyclobutane precursors
  申请人：DIELECTRIC SYSTEMS, INC.

  公开号：US20030143341A1

  公开（公告）日：2003-07-31

  New precursors and processes are provided to generate fluorinated low dielectric constant, &egr; films that have higher dimensional stability and more rigid than fluorinated Poly (Para-Xylylenes). The low &egr; films are prepared primarily from polymerization of precursors consisting of both benzocyclobutane and unsaturated carbon-carbon groups such as vinyl (C═C) and ethylenic groups. The low &egr; polymers consists primarily of SP 2 C—F, hyperconjugated Sp 3 C &agr; —F type or/and Sp 3 Si &agr; —F fluorine. The low &egr; (<2.4) films are useful for fabrications of future<0.18 &mgr;m ICs. Using low &egr; films prepared according to this invention, the integrity of dielectric, Cu and its barrier metals such as Ta can be kept intact; therefore reliability of these ICs can be assured.

  提供了新的前体和工艺来生成氟化低介电常数&egr;薄膜，这种薄膜比氟化聚对二甲苯（Para-Xylylenes）具有更高的尺寸稳定性和刚性。低介电常数薄膜主要由苯并环丁烷和不饱和碳-碳基团（如乙烯基（C═C）和乙烯基）组成的前体聚合制备而成。低 &egr; 聚合物主要由 SP 2 C-F、超共轭 SP 3 C &agr； -F型或/和SP 3 Si &agr； -F氟。低&egr;（<2.4）薄膜有助于制造未来的<0.18&mgr;m集成电路。使用根据本发明制备的低 &egr; 薄膜，可以保持电介质、铜及其阻挡金属（如 Ta）的完整性，因此可以确保这些集成电路的可靠性。
• US6649618B2
  申请人：——

  公开号：US6649618B2

  公开（公告）日：2003-11-18