COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN
申请人:Oguro Dai
公开号:US20100316950A1
公开(公告)日:2010-12-16
A composition for forming an underlayer film for lithography for imparting excellent optical characteristics and etching resistance to an underlayer film for lithography, an underlayer film being formed of the composition and having a high refractive index (n) and a low extinction coefficient (k), being transparent, having high etching resistance, containing a significantly small amount of a sublimable component, and a method for forming a pattern using the underlayer film are provided. The composition for forming an underlayer film contains a naphthalene formaldehyde polymer having a specific unit obtained by reacting naphthalene and/or alkylnaphthalene with formaldehyde, and an organic solvent.