1-ethyltetrahydrothiophenium | 45440-20-8

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 硫杂环戊烷
• 英文名称: 1-ethyltetrahydrothiophenium
• 英文别名: S-ethyltetrahydrothiophenium；ethyltetrahydrothiopheneium；ethyltetrahydrothiophenium；1-Ethylthiolan-1-ium
• CAS: 45440-20-8
• 化学式: C₆H₁₃S
• 分子量: 117.235
• InChiKey: IZBNLIFSZXOCOD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  7
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  1
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  1-ethyltetrahydrothiophenium 在 e^1-_aq 作用下， 生成
  参考文献：
  名称：

  Bonifacic, Marija; Anklam, Elke, Journal of the Chemical Society. Perkin transactions II, 1991, # 2, p. 243 - 248

  摘要：

  DOI：

文献信息

• Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10613440B2

  公开（公告）日：2020-04-07

  A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R1aSi(R2)4-a  Formula (1) and compounds of Formula (2): R3cSi(R4)3-c2Yb  Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, then baking applied resist underlayer film-forming composition; forming a resist film by applying composition for EUV resists onto resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing exposed resist film.

  一种用于 EUV 光刻的抗蚀剂底层成膜组合物，显示出良好的抗蚀剂形状；包括：作为硅烷的可水解有机硅烷、其水解产物或其水解缩合物；以及含有烃基的磺酸离子与鎓离子的盐。可水解有机硅烷包括至少一种选自式（1）化合物组成的组的有机硅化合物： R1aSi(R2)4-a 式(1) 和式 (2) 的化合物： R3cSi(R4)3-c2Yb 式 (2) 其水解产物，或其水解缩合物。一种制造半导体器件的方法，包括：在半导体衬底上形成有机底层膜；通过在有机底层膜上涂敷抗蚀剂底层膜成膜组合物，然后烘烤涂敷的抗蚀剂底层膜成膜组合物，形成抗蚀剂底层膜；通过在抗蚀剂底层膜上涂敷超紫外抗蚀剂组合物，形成抗蚀剂膜；对抗蚀剂膜进行超紫外曝光；以及通过显影曝光的抗蚀剂膜，获得抗蚀剂图案。
• COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE
  申请人：LEE Wai Mun

  公开号：US20120083436A1

  公开（公告）日：2012-04-05

  The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization.
• US8173584B2
  申请人：——

  公开号：US8173584B2

  公开（公告）日：2012-05-08
• US8101561B2
  申请人：——

  公开号：US8101561B2

  公开（公告）日：2012-01-24