2,5-dihydroxy-[1]naphthaldehyde | 51887-61-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 2,5-dihydroxy-[1]naphthaldehyde
• 英文别名: 2,5-Dihydroxy-[1]naphthaldehyd；2,5-Dihydroxynaphthalene-1-carbaldehyde
• CAS: 51887-61-7
• 化学式: C₁₁H₈O₃
• 分子量: 188.183
• InChiKey: WLVAGHAKAZSAJL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.5
• 重原子数：
  14
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  57.5
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  2,5-dihydroxy-[1]naphthaldehyde 、 3-羟基-2-萘酸肼 以 甲醇 为溶剂， 反应 3.0h， 以74%的产率得到
  参考文献：
  名称：

  基于结构的寄生蛋白酶抑制剂的设计。

  摘要：

  为了简化药物开发的临床前阶段，我们探索了分子目标上的结构数据的实用性以及计算化学和药物化学之间的协同作用。我们专注于寄生虫传染病，特别着重于开发特定的非共价蛋白酶抑制剂，这些抑制剂在寄生虫的生命周期中起着关键作用。通常，没有药物学上感兴趣的酶靶标的结构。在这种情况下，我们通过相关酶与已知结构蛋白的序列相似性对结构进行了建模。例如，我们已经构建了一种基于同源性的模型，其中一种是恶性营养素，滋养体半胱氨酸蛋白酶，并使用计算性配体识别算法DOCK识别了包括草酸双（2-羟基-1-萘基-亚甲基）酰肼（1）在内的复合酶抑制剂[Ring，CS; 孙E. JH McKerow；Lee G .；罗森塔尔（Rosenthal），PJ，昆茨（Kuntz），爱达荷州；科恩，FE，过程 Natl Acad。科学 USA 1993，90，3583]。通过次黄嘌呤摄取（IC50 7 microM）判断，化合物1在体外抑制了falcipain（IC50

  DOI：

  10.1016/0968-0896(96)00136-8
• 作为产物：
  描述：

  1,6-二羟基萘 在 乙醚 、 氢氰酸 、 zinc(II) chloride 作用下， 生成 2,5-dihydroxy-[1]naphthaldehyde 、 alkaline earth salt of/the/ methylsulfuric acid
  参考文献：
  名称：

  Morgan; Vining, Journal of the Chemical Society, 1921, vol. 119, p. 181

  摘要：

  DOI：

文献信息

• Method of preventing polymer-scale formation
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP0320227A2

  公开（公告）日：1989-06-14

  A method of preventing polymer scales from sticking in a polymerization vessel during the polymerization of a monomer having an ethylenically double bond, wherein said polymerization is carried out in a polymerization vessel of which the inner wall and other parts with which said monomer comes into contact during polymerization are previously first coated with (a) a coating solution comprising a cationic dye and the resulting coating is then coated with (b) a coating solution comprising at least one component selected from the group consisting of anionic polymeric compounds, amphoteric polymeric compounds and hydroxyl group-containing organic compounds. Polymer scale formation can be effectively prevented.

  一种在具有乙烯双键的单体聚合过程中防止聚合物鳞片粘附在聚合容器中的方法，其中所述聚合在聚合容器中进行，聚合容器的内壁和在聚合过程中与所述单体接触的其他部分之前先涂有(a)由阳离子染料组成的涂层溶液，然后在所得涂层上涂有(b)由至少一种从阴离子聚合物化合物、两性聚合物化合物和含羟基有机化合物组成的组中选出的组分组成的涂层溶液。可有效防止聚合物结垢。
• Resist underlayer film composition and patterning process using the same
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2476713A1

  公开（公告）日：2012-07-18

  There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

  本发明公开了一种抗蚀剂底层薄膜组合物，其中该组合物含有至少由以下通式（1-1）和/或（1-2）表示的一种或多种化合物和以下通式（2-1）和/或（2-2）表示的一种或多种化合物和/或其等效体缩合而得的聚合物。可以提供一种底层膜组合物，特别是用于三层抗蚀工艺的底层膜组合物，该组合物可以形成反射率降低的底层膜（即作为抗反射膜具有最佳 n 值和 k 值的底层膜）、填充性能优异、图案抗弯曲性能高、蚀刻后尤其是在厚度小于 60 nm 的高纵横向线上不会出现掉线或晃动的底层膜，以及使用该底层膜组合物的图案化工艺。
• RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME
  申请人：OGIHARA Tsutomu

  公开号：US20120184103A1

  公开（公告）日：2012-07-19

  There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
• US4933399A
  申请人：——

  公开号：US4933399A

  公开（公告）日：1990-06-12
• US8853031B2
  申请人：——

  公开号：US8853031B2

  公开（公告）日：2014-10-07