Nonafluorobutane-1-sulfonic acid 1,3-dihydro-1,3-dioxo-2H-benzo[de]isoquinoline-2-yl ester | 171417-91-7

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 异喹啉及其衍生物
• 英文名称: Nonafluorobutane-1-sulfonic acid 1,3-dihydro-1,3-dioxo-2H-benzo[de]isoquinoline-2-yl ester
• 英文别名: (1,3-dioxobenzo[de]isoquinolin-2-yl) 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate
• CAS: 171417-91-7
• 化学式: C₁₆H₆F₉NO₅S
• 分子量: 495.3
• InChiKey: LDQBXAADVARGKQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5
• 重原子数：
  32
• 可旋转键数：
  5
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  89.1
• 氢给体数：
  0
• 氢受体数：
  14

文献信息

• Orthogonal Procesing of Organic Materials Used in Electronic and Electrical Devices
  申请人：Ober Christopher K.

  公开号：US20110159252A1

  公开（公告）日：2011-06-30

  An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO 2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.

  本文介绍了一种用于光刻有机结构的正交工艺。该工艺利用氟化溶剂或超临界CO2作为溶剂，以使有机导体和半导体的性能不受其他侵蚀性溶剂的不利影响。其中一种方法还可以使用氟化光阻与HFE溶剂结合使用，但也可以使用其他氟化溶剂。在一种实施例中，氟化光阻是一种二苯并呋喃酮，但也可以使用各种氟化聚合物光阻和氟化分子玻璃光阻。例如，一种共聚物全氟癸基甲基丙烯酸酯（FDMA）和2-硝基苯甲酸甲酯（NBMA）是用于与氟化溶剂和超临界二氧化碳在光刻工艺中使用的适用于正交的氟化光阻。氟化光阻和氟化溶剂的组合提供了一种强大的正交工艺，这种工艺尚未被已知的方法或设备实现。
• Methanofullerenes
  申请人：Robinson Alex Philip Graham

  公开号：US20140134843A1

  公开（公告）日：2014-05-15

  The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

  本公开涉及新型甲烷富勒烯衍生物，由此制备的负型光刻胶组合物以及使用它们的方法。这些衍生物、它们的光刻胶组合物和方法非常适合使用紫外线辐射、超极紫外线辐射、极紫外线辐射、X射线和带电粒子束进行精细图案加工。
• [EN] METHANOFULLERENES<br/>[FR] MÉTHANOFULLERRÈNES
  申请人：ROBINSON ALEX PHILIP GRAHAM

  公开号：WO2014078097A1

  公开（公告）日：2014-05-22

  The present disclosure relates to novel methanofullerene derivatives, negative- type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

  本公开涉及新型甲烷富勒烯衍生物，由此制备的负型光刻胶组合物以及使用它们的方法。这些衍生物，它们的光刻胶组合物和方法非常适合使用紫外线辐射、超过极紫外线辐射、极紫外线辐射、X射线和带电粒子射线等技术进行精细图案处理。
• [EN] METHANOFULLERENES<br/>[FR] MÉTHANOFULLERÈNES
  申请人：ROBINSON ALEX PHILIP GRAHAM

  公开号：WO2014137663A1

  公开（公告）日：2014-09-12

  The present disclosure relates to novel methanofullerene derivatives, negative- type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Negative photosensitive compositions are also disclosed.

  本公开涉及新型甲烷富勒烯衍生物，制备其负型光阻组合物和使用它们的方法。这些衍生物、它们的光阻组合物和方法非常适合使用紫外线辐射、超过极紫外线辐射、极紫外线辐射、X射线和带电粒子射线进行精细图案处理。还公开了负光敏组合物。
• Multiple trigger photoresist compositions and methods
  申请人：Robinson Alex Phillip Graham

  公开号：US10095112B2

  公开（公告）日：2018-10-09

  The present disclosure relates to novel multiple trigger negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

  本公开涉及新型多触发阴性工作光刻胶组合物和工艺。这些工艺包括在第一步中去除交联官能团上的酸标签保护基团，在第二步中用酸敏感交联剂交联交联官能团。在光刻胶催化链中加入多重触发途径可增加接受低剂量辐照区域的化学梯度，有效地起到内置剂量依赖性淬火器-模拟器的作用，从而提高化学梯度，进而提高分辨率、分辨率模糊度和曝光宽容度。光刻胶组合物和方法非常适合使用紫外线辐射、超强紫外线辐射、极紫外线辐射、X 射线和带电粒子射线等进行精细图案处理。