双（N，N''-二异丙基乙酰胺基）锡（II） | 1421599-46-3

• 分子结构分类: 有机化合物 - 有机氮化合物
• 中文名称: 双（N，N''-二异丙基乙酰胺基）锡（II）
• 英文名称: bis(N,N′-diisopropylacetamidinato) tin(II)
• 英文别名: bis[(C-methyl-N-propan-2-ylcarbonimidoyl)-propan-2-ylamino]tin
• CAS: 1421599-46-3
• 化学式: C₁₆H₃₄N₄Sn
• 分子量: 401.183
• InChiKey: WHJQJJNTESAINO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.6
• 重原子数：
  21
• 可旋转键数：
  8
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  31.2
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  甲基锂 、 tin(ll) chloride 、 N,N'-二异丙基碳二亚胺 以 乙醚 为溶剂， 反应 3.0h， 以69%的产率得到双（N，N''-二异丙基乙酰胺基）锡（II）
  参考文献：
  名称：

  Synthesis of N-Heterocyclic Stannylene (Sn(II)) and Germylene (Ge(II)) and a Sn(II) Amidinate and Their Application as Precursors for Atomic Layer Deposition

  摘要：

  Thin films containing germanium or tin have a great variety of current and potential applications, particularly their oxides or chalcogenides. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are popular ways to make these thin films conformally even on challenging nanostructured substrates. The success of these processes depends on having precursors that are sufficiently stable, volatile, and reactive. In this paper we optimize the syntheses of the following three precursors: 1 and 2 are racemic Ge(II) or Sn(II) cyclic amides made from N-2,N-3-di-tert-butylbutane-2,3-diamine, and 3 is bis(N,N'-diisopropylacetamidinato)tin-(II). All three compounds are demonstrated to be effective precursors for ALD of their monosulfides, GeS or SnS, by reaction with H2S. 2 has also been reported previously to make polycrystalline SnO2 by ALD with oxidizing agents such as H2O2. The cyclic amides 1 and 2 are more volatile than the amidinate 3, vaporizing sufficiently for ALD even at precursor temperatures below 40 degrees C, whereas 3 vaporizes at temperatures over 90 degrees C. 1 and 2 can thus be used at lower substrate temperatures than 3. GeS or SnS can be deposited on substrates even at temperatures below 50 degrees C, while ALD of SnS from 3 becomes slow below substrate temperatures of 100 degrees C because of insufficient vapor pressure. The amount of growth per ALD cycle is higher for the cyclic amide 2 than for the amidinate 3. The GeS films are smooth and amorphous, while the SnS films are polycrystalline and granular. All of these films are uniformly thick inside holes with aspect ratios (depth/diameter) greater than 40:1.

  DOI：

  10.1021/cm403901y

文献信息

• SnO deposition <i>via</i> water based ALD employing tin(<scp>ii</scp>) formamidinate: precursor characterization and process development
  作者：Niklas Huster、Ramin Ghiyasi、David Zanders、Detlef Rogalla、Maarit Karppinen、Anjana Devi

  DOI：10.1039/d2dt02562k

  日期：——

  next-generation batteries. For the controlled growth of SnO films at low temperatures, atomic layer deposition (ALD) is employed in this study, where the choice of the precursor plays a significant role. A comparative thermal evaluation of four different amidinate-based tin(II) precursors and the influence of the ligand sphere on their physicochemical properties revealed that bis(N,N′-diisopropylformamidinato

  一氧化锡 (SnO) 是一种很有前途的氧化物半导体，具有广泛的应用前景，从 p 型场效应晶体管 (FET) 中的沟道材料到用于下一代电池的电极材料。为了在低温下控制 SnO 薄膜的生长，本研究采用原子层沉积 (ALD)，其中前体的选择起着重要作用。对四种不同的脒基锡 ( II ) 前体进行比较热评估以及配体球对其物理化学性质的影响表明，双 ( N , N '-二异丙基甲脒基锡 ( II ) ( 1) 具有所需的挥发性、良好的热稳定性和对水的足够反应性，可用作 ALD 前体。水辅助 ALD 工艺在低至 140 °C 的温度下在 Si 衬底上产生晶体 SnO 薄膜，每循环生长 (GPC) 为 0.82 Å。通过采用互补的分析工具，即 X 射线衍射 (XRD)、原子力显微镜 (AFM)、X 射线反射率 (XRR)、卢瑟福背散射光谱/核反应分析 (RBS/NRA) 和 X 射线光电子能谱 ( XP