5-cyanoacenaphthene | 71235-81-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 5-cyanoacenaphthene
• 英文别名: 1,2-dihydroacenaphthylene-5-carbonitrile；Acenaphthen-5-carbonitril；5-Cyan-acenaphthen；acenaphthene-5-carbonitrile
• CAS: 71235-81-9
• 化学式: C₁₃H₉N
• mdl: MFCD00995870
• 分子量: 179.221
• InChiKey: SAMBTDSIZXPXBA-UHFFFAOYSA-N

物化性质

• 熔点：
  143 °C
• 沸点：
  373.8±21.0 °C(Predicted)
• 密度：
  1.21±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.7
• 重原子数：
  14
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.153
• 拓扑面积：
  23.8
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  5-cyanoacenaphthene 在 氢氧化钾 作用下， 生成 5-苊甲酸
  参考文献：
  名称：

  Grignard; Bellet; Courtot, Annales de Chimie (Cachan, France), 1915, vol. <9> 4, p. 47

  摘要：

  DOI：
• 作为产物：
  描述：

  5-溴苊 在 吡啶 作用下， 生成 5-cyanoacenaphthene
  参考文献：
  名称：

  Campbell et al., Chemistry and industry, 1952, p. 739

  摘要：

  DOI：

文献信息

• Copper-catalyzed remote C–H arylation of polycyclic aromatic hydrocarbons (PAHs)
  作者：Anping Luo、Min Zhang、Zhangyi Fu、Jingbo Lan、Di Wu、Jingsong You

  DOI：10.3762/bjoc.16.49

  日期：——

  regioselective C–H arylation of substituted polycyclic aromatic hydrocarbons (PAHs) is a desired but challenging task. A copper-catalyzed C7–H arylation of 1-naphthamides has been developed by using aryliodonium salts as arylating reagents. This protocol does not need to use precious metal catalysts and tolerates wide variety of functional groups. Under standard conditions, the remote C–H arylation of other

  取代的多环芳烃（PAHs）的区域选择性C–H芳基化是一项理想而艰巨的任务。通过使用芳基碘鎓盐作为芳基化试剂，开发了铜催化的1-萘酰胺的C7–H芳基化反应。该协议不需要使用贵金属催化剂，并且可以耐受多种官能团。在标准条件下，还可以完成其他PAH的远程C–H芳基化反应，包括菲-9甲酰胺，pyr 1甲酰胺和荧蒽3甲酰胺，这为开发多种有机光电材料提供了机会。
• Polycyclic Imide Derivatives: Synthesis and Effective Tuning of Lowest Unoccupied Molecular Orbital Levels through Molecular Engineering
  作者：Lin Ding、Han-Ze Ying、Yan Zhou、Ting Lei、Jian Pei

  DOI：10.1021/ol1024103

  日期：2010.12.3

  A series of fluoranthene-fused imide derivatives were facilely developed through a Diels−Alder reaction followed by decarbonylation. The investigation of their photophysical and electrochemical properties demonstrated that their LUMO levels were effectively tuned from −3.2 to −3.8 eV through the introduction of a fused imide unit, which provides a platform to design new air-stable and solution-processable

  通过Diels-Alder反应，然后进行脱羰作用，可以轻松地开发出一系列荧蒽融合的酰亚胺衍生物。对它们的光物理和电化学性质的研究表明，通过引入熔融酰亚胺单元，可将其LUMO能级有效地从-3.2调节至-3.8 eV，这为设计新的对空气稳定且可溶液处理的n型材料提供了平台。
• CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
  申请人：Lee Wai Mun

  公开号：US20090130849A1

  公开（公告）日：2009-05-21

  A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.

  本文描述了一种化学机械平整化（或其他抛光）的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率，包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
• METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
  申请人：Lee Wai Mun

  公开号：US20100043823A1

  公开（公告）日：2010-02-25

  The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.

  本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法，包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分，如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
• COMPOSITION COMPRISING CHELATING AGENTS CONTAINING AMIDOXIME COMPOUNDS
  申请人：Lee Wai Mun

  公开号：US20100105595A1

  公开（公告）日：2010-04-29

  The present invention is a novel aqueous cleaning solution for use in semiconductor front end of the line (FEOL) manufacturing process wherein the cleaning solution comprises at least one amidoxime compound.

  本发明是一种用于半导体前端制造过程中的新型水性清洗溶液，其中清洗溶液包含至少一种酰胺肟化合物。