iodo-bis-trifluoromethyl-arsine | 359-55-7

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代烷
• 英文名称: iodo-bis-trifluoromethyl-arsine
• 英文别名: Bis(trifluormethyl)-jodarsan；Bis-trifluormethyl-arsinigsaeure-jodid；Jod-bis-trifluormethyl-arsin；bis(trifluoromethyl)-arsinous iodide；Iodoarsine, bis(trifluoromethyl)-；iodo-bis(trifluoromethyl)arsane
• CAS: 359-55-7
• 化学式: C₂AsF₆I
• 分子量: 339.839
• InChiKey: ZAFXYFDGLFEXII-UHFFFAOYSA-N

物化性质

• 沸点：
  14 °C(Press: 54 Torr)

计算性质

• 辛醇/水分配系数(LogP)：
  2.62
• 重原子数：
  10
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  iodo-bis-trifluoromethyl-arsine 在 H₂O 作用下， 以2%的产率得到三氟甲烷
  参考文献：
  名称：

  316.有机金属和有机金属氟化合物。第六部分 三氟甲基砷

  摘要：

  DOI：

  10.1039/jr9530001552
• 作为产物：
  描述：

  三氟碘甲烷 在 砷化氢 作用下， 生成 iodo-bis-trifluoromethyl-arsine
  参考文献：
  名称：

  Walaschewski, Chemische Berichte, 1953, vol. 86, p. 272,274

  摘要：

  DOI：

文献信息

• Reaktive E=C(p-p)π-Systeme, XLIII [1] Darstellung und Charakterisierung P-Phosphino- oder P-Arsino-substituierter Fluorphosphaalkene des Typs R₂E-P=C(F)NEt₂ (R = Me, CF₃, Me₂N; E = P, As) / Reactive E=C(p-p)-π Systems XLIII [1] Synthesis and Characterization of P-Phosphino or P-Arsino Substituted Fluorophosphaalkenes of the Type R₂E-P=C(F)NEt₂ (R= Me, CF₃, Me₂N; E = P As)
  作者：Joseph Grobe、Duc Le Van、Jost Winnemöller、Bernt Krebs、Mechtild Läge

  DOI：10.1515/znb-1996-0604

  日期：1996.6.1

  The easily accessible phosphaalkene HP=C(F)NEt₂ (lb) reacts with halophosphanes or -arsanes R₂EX (X = Cl, I) in the presence of NEt₃ to give P-phosphino- or -P-arsino substituted fluorophosphaalkenes of the type RiE-P=C(F)NEti (2 - 6) in high yields (60 - 85 %) [R₂E: (CF₃)₂P (2), Me₂N(CF₃)P (3), Me₂P (4), (CF₃)₂As (5), Me₂As (6)]. The analogous reaction of ib with CF₃PI₂ (molar ratio 1:2) unexpectedly leads to the triphosphetene Et₂N - C=P-PCF₃-PCF₃ (7). The stability of compounds 2 - 6 as a function of R₂E decreases from As to P and from CF₃ to Me, respectively.

  Compounds 2 - 6 generally show the Z-configuration and have been characterized by thorough spectroscopic investigations (MS,IR; ¹H, ¹⁹F, ¹¹C, ³¹PNMR). A single crystal X-ray diffraction study of 2 proves the π-type interaction of the nitrogen lone pair with the P=C bond thus enhancing the stability of the system and the PP bond order

  易于获取的磷烯HP=C(F)NEt₂ (lb)在NEt₃的存在下，与卤代磷烷或砷烷R₂EX (X = Cl, I)反应，高产率（60-85％）地生成P-磷取代或P-砷取代的氟磷烯化合物，式为RiE-P=C(F)NEti (2-6) [R₂E: (CF₃)₂P (2), Me₂N(CF₃)P (3), Me₂P (4), (CF₃)₂As (5), Me₂As (6)]。lb与CF₃PI₂（摩尔比1:2）的类似反应出乎意料地导致三磷杂环化合物Et₂N - C=P-PCF₃-PCF₃ (7)。化合物2-6的稳定性随着R₂E的变化从As到P，从CF₃到Me而降低。

  化合物2-6一般显示Z构型，并通过彻底的光谱研究（MS，IR; ¹H，¹⁹F，¹¹C，³¹PNMR）进行了表征。化合物2的单晶X射线衍射研究证明了氮孤对电子与P=C键的π型相互作用，从而增强了系统的稳定性和PP键阶数。

• PERFLUOROALKYL ARSENICALS: PART VIII. REACTION OF ARSENIC SULPHIDES WITH PERFLUOROALKYL IODIDES
  作者：W. R. Cullen

  DOI：10.1139/v63-357

  日期：1963.10.1

  (CH₃)₂AsSC₂H₅, prepared from (CH₃)₂AsCl and Pb(SC₂H₅)₂, and ((CH₃)₂As)₂S₂ react with R_fI at 100° to give the compounds (CH₃)₂AsR_f (R_f = CF₃, C₃F₇). The compounds AS₂S_x (x = 2, 3) do not react with CF₃I at 100°. ((CF₃)₂As)₂S, prepared from (CF₃)₂AsI and Ag₂S or from (CF₃)₂AsH and S, reacts with Hg to give ((CF₃)₂As)₂, decomposes at 175° to give (CF₃)₃As, and reacts with CF₃I at 125° to give mainly (CF₃)₃As. Some (CF₃)₂AsI and CF₃SAs(CF₃)₂ is also produced from this last reaction.

  (CH₃)₂AsSC₂H₅，由(CH₃)₂AsCl和Pb(SC₂H₅)₂制备而成，且((CH₃)₂As)₂S₂与R_fI在100℃下反应，生成化合物(CH₃)₂AsR_f (R_f = CF₃，C₃F₇)。化合物AS₂S_x (x = 2, 3)在100℃下不与CF₃I反应。((CF₃)₂As)₂S，由(CF₃)₂AsI和Ag₂S或(CF₃)₂AsH和S制备而成，与Hg反应生成((CF₃)₂As)₂，在175℃分解为(CF₃)₃As，与CF₃I在125℃下反应主要生成(CF₃)₃As。该反应还产生了一些(CF₃)₂AsI和CF₃SAs(CF₃)₂。
• A convenient and efficient preparation of trifluoromethyl-phosphorus and -arsenic hydrides
  作者：R. G. Cavell、R. C. Dobbie

  DOI：10.1039/j19670001308

  日期：——

  The compounds CF3MH2 and (CF3)2MH (M = P or As) can be prepared in high yield by the reduction of the corresponding iodides with hydrogen iodide and mercury. Under the same conditions the diphosphine and diarsine, (CF3)2M·M(CF3)2, can be reduced to (CF3)2MH, and the cyclic tetramer and pentamer, (CF3M)4,5 to CF3MH2.

  通过用碘化氢和汞还原相应的碘化物，可以高收率制备化合物CF 3 MH 2和（CF 3）2 MH（M = P或As）。在相同条件下，可将二膦和二砷（CF 3）2 M·M（CF 3）2还原为（CF 3）2 MH，将环状四聚体和五聚体（CF 3 M）4,5还原为CF 3 MH 2。
• Preparation and crystal structures of [As(CF3)2O(OH)]2, [As(CF3)-O(OH)Cl]2, and As4(CF3)6O6(OH)2; a novel cage structure containing four- and six-co-ordinated arsenic
  作者：Rakesh Bohra、Herbert W. Roesky、Mathias Noltemeyer、George M. Sheldrick

  DOI：10.1039/dt9840002011

  日期：——

  The compounds [As(CF3)2O(OH)]2(1) and As4(CF3)6O6(OH)2(3) have been prepared by oxidative hydrolysis of As(CF3)3, and a mixture of As(CF3)l2 and As(CF3)2l, respectively; [As(CF3)O(OH)Cl]2(2) was isolated from the reaction of compound (3) with SiMe3Cl. Crystals of compound (1) are triclinic, space group P, a= 584.2(1), b= 703.7(1), c= 958.6(1) pm, α= 103.91(1), β= 103.10(1), γ= 107.90(1)°, and Z= 1

  化合物[As（CF 3）2 O（OH）] 2（1）和As 4（CF 3）6 O 6（OH）2（3）是通过将As（CF 3）3氧化水解而制备的，并且分别为As（CF 3）l 2和As（CF 3）2 l的混合物；从化合物（3）与SiMe 3 Cl的反应中分离出[As（CF 3）O（OH）Cl] 2（2）。化合物（1）的晶体是三斜晶，空间群P，a = 584.2（1），b= 703.7（1），c = 958.6（1）pm，α= 103.91（1），β= 103.10（1），γ= 107.90（1）°，Z = 1.化合物（2）和（3）的晶体）是单斜晶系，空间群P 2 1 / ñ，具有一个= 554.3（1），b = 934.5（2），C ^ = 1 149.6（2）时，β= 92.70（1）°，和ž = 2（ 2），a = 880.3（2），b = 1 011.4（2），c = 1 256.7（3）pm，β=
• Arsine, antimony and phosphine substitutes
  申请人：AIR PRODUCTS AND CHEMICALS, INC.

  公开号：EP0352607A3

  公开（公告）日：1990-11-14

  The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoro­organometallic compounds M(CF₃)₃, M(CF₂CF₃)₃, or any M(CnF(2n+1))3-yHy compound where (y≦2), M(CH₂CF₃)₃ or any fluoroalkyl organometallics of the general formula M(CnH[(2n+1)-x]Fx)3-yHy, where y≦2; x has a value 1≦ x ≦ 2n + 1; and M = As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc.; doping of SiO₂ or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy; and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silicon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.Specifically, the use of tris-trifluoromethyl arsenic (As(CF₃)₃) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.

  本发明涉及至少部分氟化有机金属化合物在反应性沉积应用中的使用。更具体地，本发明涉及使用氟有机金属化合物M（CF₃）₃，M（CF₂CF₃）₃或任何M（CnF（2n+1））3-yHy化合物（其中y≦2），M（CH₂CF₃）₃或任何通式为M（CnH [（2n+1）-x] Fx）3-yHy的氟烷基有机金属化合物，其中y≦2；x的值为1≦x≦2n + 1；M = As，P或Sb，在需要沉积相应元素的过程中。这些用途包括许多不同的过程；化合物半导体材料的有机金属气相外延，如GaAs，InP，AlGaAs，InSb等；掺杂SiO₂或基于硼硅酸盐的玻璃以增强玻璃的重熔性能；原位n型掺杂硅外延材料；用于离子注入的砷或磷的来源；化学束外延；以及扩散掺杂到电子材料，如二氧化硅，硅和多晶硅中。这些类型的材料通常具有高挥发性，低毒性，不稳定的金属配体键和稳定的分解产物。具体来说，已确定使用三三氟甲基砷（As（CF₃）₃）替代砷化氢在制造硅集成电路，III-V族化合物半导体，光电子学和其他电子设备中的应用。