Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
申请人:Mitsubishi Gas Chemical Company, Inc.
公开号:US11137686B2
公开(公告)日:2021-10-05
The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),
wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R1 and R2 is a group having an iodine atom.
本发明提供了一种用于制备光刻下层膜的材料,包含至少下列式(1)所代表的化合物或包括源自下列式(1)所代表的化合物的结构单元的树脂中的任何一种,其中R1代表具有1至60个碳原子的2n-价基团,或者是一个单键,每个R2独立地代表卤素原子、具有1至10个碳原子的直链、支链或环烷基基团、具有6至10个碳原子的芳基基团、具有2至10个碳原子的烯基基团、具有1至30个碳原子的烷氧基团、硫醇基团或羟基团,并且可以在同一萘环或苯环中相同或不同,n是1至4的整数,方括号[ ]中n的结构单元的结构式在n是2或更多的整数时可以相同或不同,X代表氧原子、硫原子或非桥联基团,每个m2独立地是0至7的整数,其中至少一个m2是1至7的整数,每个q独立地是0或1,但至少从R1和R2组成的组中选择的一个是具有碘原子的基团。