Tetrakis-(2-hydroxy-aethyl)-ammonium-fluorid | 4328-05-6

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: Tetrakis-(2-hydroxy-aethyl)-ammonium-fluorid
• 英文别名: Tetrakis(2-hydroxyethyl)azanium;fluoride
• CAS: 4328-05-6
• 化学式: C₈H₂₀NO₄*F
• 分子量: 213.25
• InChiKey: LDGSNSICWQKNDG-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  -5.22
• 重原子数：
  14
• 可旋转键数：
  8
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  80.9
• 氢给体数：
  4
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  Tetrakis-(2-hydroxy-aethyl)-ammonium-fluorid 生成 2-氟乙醇
  参考文献：
  名称：

  Toxic Fluorine Compounds. III.¹ ι-Fluoroalcohols

  摘要：

  DOI：

  10.1021/jo01113a006

文献信息

• CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP1959303A1

  公开（公告）日：2008-08-20

  A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols. In consequence, according to the cleaning method of the present invention, in manufacturing semiconductor devices or display devices, it is possible to extremely advantageously manufacture circuit wirings with a little burden on the environment, high precision and high quality on an industrial scale.

  本发明提供了一种用于半导体器件或显示器件的清洗液，该清洗液含有在碳链的相邻位置上具有两个或两个以上氨基的特定结构的多胺或其盐，以及使用该清洗液的半导体器件或显示器件的清洗方法。本发明的半导体器件或显示器件清洗液安全性高，对环境的负担小，能够在短时间内轻松去除半导体基板上的蚀刻残留物；在这种情况下，可以实现微细加工，而不会彻底腐蚀配线材料；此外，只需用水即可实现漂洗，而无需使用醇类等有机溶剂作为漂洗液。因此，根据本发明的清洗方法，在制造半导体器件或显示器件时，可以极为有利地制造出对环境负担小、高精度和高质量的工业规模的电路布线。
• Etching agent composition for thin films having high permittivity and process for etching
  申请人：——

  公开号：US20040188385A1

  公开（公告）日：2004-09-30

  An etching agent composition for thin films having a high permittivity which is an aqueous solution comprising at least one acid selected from organic acids and inorganic acids and a fluorine compound and a process which comprises etching a thin film having a high permittivity using the composition are provided. The composition and the process are used in the process for producing semiconductor devices using thin films having a high permittivity and, in particular, very thin gate insulation films and very thin gate electrodes which are indispensable for enhancing integration and speed of MOSFET.

  本发明提供了一种用于具有高介电常数的薄膜的蚀刻剂组合物，该组合物是一种水溶液，其中包含至少一种选自有机酸和无机酸的酸以及一种氟化合物，还提供了一种包括使用该组合物蚀刻具有高介电常数的薄膜的工艺。该组合物和工艺用于使用具有高介电常数的薄膜生产半导体器件的工艺，特别是用于生产极薄的栅极绝缘膜和极薄的栅极电极，这对于提高 MOSFET 的集成度和速度是不可或缺的。
• Cleaning solution and cleaning process using the solution
  申请人：——

  公开号：US20040224866A1

  公开（公告）日：2004-11-11

  (1) A cleaning solution for semiconductor substrates comprising an oxidizing agent, an acid and a fluorine compound, having a pH adjusted in the range of 3 to 10 by addition of a basic compound and having a concentration of water of 80% by weight or greater, (2) a cleaning solution for semiconductor substrates comprising an oxidizing agent, an acid, a fluorine compound and a corrosion inhibitor, having a pH adjusted in the range of 3 to 10 by addition of a basic compound and having a concentration of water of 80% by weight or greater, and a process for cleaning semiconductor substrates having metal wiring which comprises cleaning with the cleaning solution, are provided. The cleaning solution can completely remove residues of etching on semiconductor substrates in a short time, does not corrode copper wiring materials and insulation film materials, is safe and exhibits little adverse effects on the environment.

  (1) 一种用于半导体基底的清洗液，包括一种氧化剂、一种酸和一种氟化合物，其 pH 值通过添加一种碱性化合物在 3 至 10 的范围内进行调节，并且水的浓度为 80% 或更高(按重量计)；(2) 一种用于半导体基底的清洗液，包括一种氧化剂、一种酸、一种氟化合物和一种缓蚀剂，其 pH 值通过添加一种碱性化合物在 3 至 10 的范围内进行调节，并且水的浓度为 80% 或更高(按重量计)；以及一种用于半导体基底的工艺、(2) 由氧化剂、酸、氟化合物和腐蚀抑制剂组成的半导体基板清洗液，其 pH 值通过添加碱性化合物在 3 至 10 的范围内调节，水的浓度为 80% 或更高。该清洗液可在短时间内彻底清除半导体基片上的蚀刻残留物，不会腐蚀铜配线材料和绝缘膜材料，安全且对环境的不利影响小。
• Schrader, # 714, p. 14
  作者：Schrader

  DOI：——

  日期：——
• Cleaning liquid and cleaning method
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP1628336B1

  公开（公告）日：2012-01-04