摩熵化学
数据库官网
小程序
打开微信扫一扫
首页 分子通 化学资讯 化学百科 反应查询 关于我们
请输入关键词

Tritert-butyl-(2,2-ditert-butyl-3,3-dimethyldisiletan-1-yl)silane | 356558-81-1

中文名称
——
中文别名
——
英文名称
Tritert-butyl-(2,2-ditert-butyl-3,3-dimethyldisiletan-1-yl)silane
英文别名
tritert-butyl-(2,2-ditert-butyl-3,3-dimethyldisiletan-1-yl)silane
Tritert-butyl-(2,2-ditert-butyl-3,3-dimethyldisiletan-1-yl)silane化学式
CAS
356558-81-1
化学式
C24H54Si3
mdl
——
分子量
426.949
InChiKey
GFIZNEUJQUFUKT-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    9.06
  • 重原子数:
    27
  • 可旋转键数:
    6
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

反应信息

  • 作为反应物:
    参考文献:
    名称:
    Silylene R*XSi (R*=SitBu3; X=H, Me, Ph, Hal, R*): Bildung und Reaktionen
    摘要:
    Thermolyses of disupersilylsilanes (R2SiX2)-Si-* (R* = supersilyl = (SiBu3)-Bu-t; X = H, Hal or H together with Me, Ph, Pr) at about 160 degreesC lead - besides R*X (R*H preferred to R*Br) - to silylenes R*XSi (X = H, Me, Ph, Pr), the intermediate existence of which is proven by trapping them with Et3SiH (formation of Et3Si-(R*XSi)-H), with I-2 (formation of I-(R*XSi)-I) or with CH2=CH-CH=CH2 (formation of [1+4] cycloadducts). The rate of R*X elimination increases in direction R-2*SiH2 < R-2*SiMeH < R-2*SiBrH and R-2*SiF2 < R-2*SiBr2 < R-2*SiI2. In addition, silylenes R*XSi are produced from monosupersilylsilanides R*XSiHalM (X = H, Ph, Hal; M = Na, MgHal) by MHal elimination at low temperatures and trapped by inserting them into SiH- or SiM-bonds of Et3SiH, R*PhClSiH, R*Na and R*XSiHalM. Thermolyses of R*SiX2Na (X = Cl, Pr, I) yield - via R*XSi - disilanides R*X2Si-(R*XSi)-Na which at about -20 degreesC eliminate NaX with formation of trans-configurated disilenes R*XSi=SiXR* as intermediates. In addition, R*SiCl2Na transforms into R*Cl2Si-(R*ClSi)(n)-Na (n = 2, 3) which eliminates NaCl with formation of cyclosilanes (R*ClSi)(n+1). Finally, disupersilylsilanides R-2*SiHalLi eliminate LiF at room temperature or LiCl at - 78 degreesC or LiBr at - 120 degreesC with formation of the silylene R-2*Si which stabilizes by formation of the silane R-2*SiH2 and the disilacyclobutane -R*HSi-(SiBu2)-Bu-t-CMe2-CH2- in the molar ratio 1:6. Possibly, in the latter case R-2*Si is not formed in the singulet state, as is usual with silylenes, but in the triplet state for the first time. (C) 2001 Elsevier Science B.V. All rights reserved.
    DOI:
    10.1016/s0022-328x(01)00745-8
  • 作为产物:
    描述:
    bis(tri-tert-butylsilyl)dichlorosilane 在 lithium 作用下, 以 四氢呋喃乙醚 为溶剂, 生成 1,1,1,3,3,3-hexa-tert-butyltrisilaneTritert-butyl-(2,2-ditert-butyl-3,3-dimethyldisiletan-1-yl)silane
    参考文献:
    名称:
    Silylene R*XSi (R*=SitBu3; X=H, Me, Ph, Hal, R*): Bildung und Reaktionen
    摘要:
    Thermolyses of disupersilylsilanes (R2SiX2)-Si-* (R* = supersilyl = (SiBu3)-Bu-t; X = H, Hal or H together with Me, Ph, Pr) at about 160 degreesC lead - besides R*X (R*H preferred to R*Br) - to silylenes R*XSi (X = H, Me, Ph, Pr), the intermediate existence of which is proven by trapping them with Et3SiH (formation of Et3Si-(R*XSi)-H), with I-2 (formation of I-(R*XSi)-I) or with CH2=CH-CH=CH2 (formation of [1+4] cycloadducts). The rate of R*X elimination increases in direction R-2*SiH2 < R-2*SiMeH < R-2*SiBrH and R-2*SiF2 < R-2*SiBr2 < R-2*SiI2. In addition, silylenes R*XSi are produced from monosupersilylsilanides R*XSiHalM (X = H, Ph, Hal; M = Na, MgHal) by MHal elimination at low temperatures and trapped by inserting them into SiH- or SiM-bonds of Et3SiH, R*PhClSiH, R*Na and R*XSiHalM. Thermolyses of R*SiX2Na (X = Cl, Pr, I) yield - via R*XSi - disilanides R*X2Si-(R*XSi)-Na which at about -20 degreesC eliminate NaX with formation of trans-configurated disilenes R*XSi=SiXR* as intermediates. In addition, R*SiCl2Na transforms into R*Cl2Si-(R*ClSi)(n)-Na (n = 2, 3) which eliminates NaCl with formation of cyclosilanes (R*ClSi)(n+1). Finally, disupersilylsilanides R-2*SiHalLi eliminate LiF at room temperature or LiCl at - 78 degreesC or LiBr at - 120 degreesC with formation of the silylene R-2*Si which stabilizes by formation of the silane R-2*SiH2 and the disilacyclobutane -R*HSi-(SiBu2)-Bu-t-CMe2-CH2- in the molar ratio 1:6. Possibly, in the latter case R-2*Si is not formed in the singulet state, as is usual with silylenes, but in the triplet state for the first time. (C) 2001 Elsevier Science B.V. All rights reserved.
    DOI:
    10.1016/s0022-328x(01)00745-8
点击查看最新优质反应信息

文献信息

  • Sekiguchi, Akira; Tanaka, Takashi; Ichinohe, Masaaki, Journal of the American Chemical Society, 2003, vol. 125, # 17, p. 4962 - 4963
    作者:Sekiguchi, Akira、Tanaka, Takashi、Ichinohe, Masaaki、Akiyama, Kimio、Tero-Kubota, Shozo
    DOI:——
    日期:——
查看更多

同类化合物

(2-溴乙氧基)-特丁基二甲基硅烷 鲸蜡基聚二甲基硅氧烷 骨化醇杂质DCP 马沙骨化醇中间体 马来酸双(三甲硅烷)酯 顺式-二氯二(二甲基硒醚)铂(II) 顺-N-(1-(2-乙氧基乙基)-3-甲基-4-哌啶基)-N-苯基苯酰胺 降钙素杂质13 降冰片烯基乙基三甲氧基硅烷 降冰片烯基乙基-POSS 间-氨基苯基三甲氧基硅烷 镓,二(1,1-二甲基乙基)甲基- 镁,氯[[二甲基(1-甲基乙氧基)甲硅烷基]甲基]- 锑,二溴三丁基- 铷,[三(三甲基甲硅烷基)甲基]- 铂(0)-1,3-二乙烯-1,1,3,3-四甲基二硅氧烷 钾(4-{[二甲基(2-甲基-2-丙基)硅烷基]氧基}-1-丁炔-1-基)(三氟)硼酸酯(1-) 金刚烷基乙基三氯硅烷 酰氧基丙基双封头 达格列净杂质 辛醛,8-[[(1,1-二甲基乙基)二甲基甲硅烷基]氧代]- 辛甲基-1,4-二氧杂-2,3,5,6-四硅杂环己烷 辛基铵甲烷砷酸盐 辛基衍生化硅胶(C8)ZORBAX?LP100/40C8 辛基硅三醇 辛基甲基二乙氧基硅烷 辛基三甲氧基硅烷 辛基三氯硅烷 辛基(三苯基)硅烷 辛乙基三硅氧烷 路易氏剂-3 路易氏剂-2 路易士剂 试剂Cyanomethyl[3-(trimethoxysilyl)propyl]trithiocarbonate 试剂3-[Tris(trimethylsiloxy)silyl]propylvinylcarbamate 试剂3-(Trimethoxysilyl)propylvinylcarbamate 试剂2-(Trimethylsilyl)cyclopent-2-en-1-one 试剂11-Azidoundecyltriethoxysilane 西甲硅油杂质14 衣康酸二(三甲基硅基)酯 苯胺,4-[2-(三乙氧基甲硅烷基)乙基]- 苯磺酸,羟基-,盐,单钠聚合甲醛,1,3,5-三嗪-2,4,6-三胺和脲 苯甲醇,a-[(三苯代甲硅烷基)甲基]- 苯并磷杂硅杂英,5,10-二氢-10,10-二甲基-5-苯基- 苯基二甲基氯硅烷 苯基二甲基乙氧基硅 苯基二甲基(2'-甲氧基乙氧基)硅烷 苯基乙酰氧基三甲基硅烷 苯基三辛基硅烷 苯基三甲氧基硅烷