Electronic Properties and Field-Effect Transistors of Oligomers End-Capped with Benzofuran Moieties
作者:Charlotte Mallet、Yahia Didane、Takeshi Watanabe、Noriyuki Yoshimoto、Magali Allain、Christine Videlot-Ackermann、Pierre Frère
DOI:10.1002/cplu.201300037
日期:2013.5
Three new oligomers bearing furan, thiophene, or bithiophene units end‐capped by benzofuran moieties were synthesized and studied with respect to their structural, optical, electrochemical, and electrical properties. A comparison of the electronic properties performed by theoretical calculation, absorption and emission spectroscopy, and cyclic voltammetry revealed a strong influence of the spacer unit
合成了三种新的带有呋喃,噻吩或联噻吩单元并由苯并呋喃部分封端的新型低聚物,并对其结构,光学,电化学和电学性质进行了研究。通过理论计算,吸收和发射光谱以及循环伏安法进行的电子性能比较表明,间隔单元的影响很大,主要影响发射光谱。尽管以噻吩或联噻吩为中心单元的两种化合物的量子产率均相对较低,分别为30%和17%,但基于中心呋喃核,该化合物的最大产率却高达71%。在有机场效应晶体管中将其用作p型半导体层之前,通过X射线衍射和AFM研究了高真空蒸发的薄膜。-2 cm 2 V -1 s -1。