n-Type semiconductor element, complementary type semiconductor device and method for manufacturing same, and wireless communication device in which same is used
申请人:TORAY INDUSTRIES, INC.
公开号:US10615352B2
公开(公告)日:2020-04-07
An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.
利用简单的工艺提供了一种优秀的互补半导体器件。一种 n 型驱动半导体器件,包括衬底;以及衬底上的源电极、漏电极、栅电极、栅极绝缘层和半导体层;还包括位于半导体层与栅极绝缘层相对侧的第二绝缘层;其中第二绝缘层包含一种有机化合物,该有机化合物含有碳原子和氮原子之间的键;以及半导体层包含一种碳纳米管复合材料,该碳纳米管复合材料的表面至少有一部分附着有共轭聚合物。