Sulfur Containing Heterocycle-Fused Naphthalene Tetracarboxylic Acid Diimide Derivatives, Preparation Method And Use Thereof
申请人:Gao Xike
公开号:US20120253045A1
公开(公告)日:2012-10-04
Sulfur containing heterocycle-fused naphthalenetetracarboxylic acid diimide derivatives represented by formula (I) are disclosed,
in which, R
1
and R
2
are C
1
-C
30
and C
1
-C
12
linear alkyl or branched alkyl, respectively; R
3
is H or halogen atom. The preparation method of the derivatives and the use thereof in manufacture of organic thin film field effect transistor or organic solar batteries are also disclosed.
SULFUR CONTAINING HETEROCYCLE-FUSED NAPHTHALENE TETRACARBOXYLIC ACID DIIMIDE DERIVATIVES, PREPARATION METHOD AND USE THEREOF
申请人:Shanghai Institute Of Organic Chemistry,
Chinese Academy Of Sciences
公开号:EP2492271B1
公开(公告)日:2018-05-09
US8471021B2
申请人:——
公开号:US8471021B2
公开(公告)日:2013-06-25
[EN] SULFUR CONTAINING HETEROCYCLE-FUSED NAPHTHALENE TETRACARBOXYLIC ACID DIIMIDE DERIVATIVES, PREPARATION METHOD AND USE THEREOF<br/>[FR] DÉRIVÉS DE DIIMIDE D'ACIDE NAPHTALÈNE-TÉTRACARBOXYLIQUE CONDENSÉ AVEC UN HÉTÉROCYCLE CONTENANT DU SOUFRE, PROCÉDÉ DE PRÉPARATION ET UTILISATION DE CEUX-CI
申请人:SHANGHAI INST ORGANIC CHEM
公开号:WO2011047624A1
公开(公告)日:2011-04-28
Sulfur containing heterocycle-fused naphthalene tetracarboxylic acid diimide derivatives represented by formula (I) are disclosed, in which R1 and R2 are C1-C30 and C1-C12 linear alkyl or branched alkyl, respectively, and R3 is H or halogen atom. The preparation method of said derivatives and the use thereof in manufacture of organic thin film field effect transistor or organic solar batteries are also disclosed.
Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors
present compounds bear the branched N-alkyl substituents with the carbon atom numbers from 12 to 24, which guarantees good material solubility. The solution-processed, bottom-gate organicthinfilmtransistors based on new compounds 3−12 operate well in air with the electron mobility ranging from ∼10−6 to 0.26 cm2 V−1 s−1, depending on the nature of the branched N-alkyl substituent and the π-backbone
芯膨胀的萘二酰亚胺的四个家族(NDI)衍生物,设计并合成,即,NDI-DTYM2(1 - 7,其中1和2以前报道),NDI-DTDCN2(8和9),NDI-DTYCA2(10和11),以及NDI-DCT2(12),其中NDI核融合了两个2-(1,3-二硫醇-2-亚甲基)丙二腈(DTYM)基团,两个1,4-二硫氨酸-2,3-二碳腈(DTDCN)基团,两个烷基2-(1 ,3-二硫基-2-亚烷基)氰基乙酸酯(DTYCA)基团和两个2,3-二氰基噻吩(DCT)基团。本发明化合物的NDI核心带有碳原子数为12至24的支链N-烷基取代基,这保证了良好的材料溶解性。的溶液处理,底栅有机薄膜基于新化合物晶体管3 - 12与空气中的电子迁移率范围为〜10操作以及-6至0.26厘米2 V -1小号-1,取决于的性质支链的N-烷基取代基和π-主链结构。