2-[N,2-bis(2-hydroxyethyl)anilino]-2-(hydroxymethyl)propane-1,3-diol

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 2-[N,2-bis(2-hydroxyethyl)anilino]-2-(hydroxymethyl)propane-1,3-diol
• 化学式: C₁₄H₂₃NO₅
• 分子量: 285.34
• InChiKey: YBBCQQNUBMAEQM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.2
• 重原子数：
  20
• 可旋转键数：
  9
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.57
• 拓扑面积：
  104
• 氢给体数：
  5
• 氢受体数：
  6

文献信息

• COMPOSITIONS AND METHODS FOR SELECTIVE POLISHING OF PLATINUM AND RUTHENIUM MATERIALS
  申请人：Cabot Microelectronics Corporation

  公开号：EP2888758A1

  公开（公告）日：2015-07-01
• [EN] COMPOSITIONS AND METHODS FOR SELECTIVE POLISHING OF PLATINUM AND RUTHENIUM MATERIALS<br/>[FR] COMPOSITIONS ET PROCÉDÉS POUR POLISSAGE SÉLECTIF DE MATÉRIAUX DE PLATINE ET DE RUTHÉNIUM
  申请人：CABOT MICROELECTRONICS CORP

  公开号：WO2014031427A1

  公开（公告）日：2014-02-27

  The present invention provides chemical-mechanical polishing (CMP) methods for polishing a platinum and/or ruthenium containing substrate, and compositions suitable for use in the methods. The polishing compositions used with the methods of the invention, which contain alumina and at least one additive selected from the group consisting of a suppressor, a complexing agent, and an amino compound, allow for platinum and ruthenium to be polished. The methods of the invention provide for tailoring the relative removal rates of platinum, ruthenium, silicon oxide and silicon nitride.