COMPOSITION FOR FORMING FINE PATTERN AND METHOD FOR FORMING FINED PATTERN USING SAME
申请人:Okamura Toshira
公开号:US20140127478A1
公开(公告)日:2014-05-08
The present invention provides a resist pattern-forming composition capable of forming a resist pattern excellent in etching resistance. The invention also provides a resist pattern formation method using that composition. The composition comprises pure water and a water-soluble resin having aromatic group-containing substituents in its side chain. The composition also contains a free acid or an acid group combined with the water-soluble resin.
本发明提供了一种能够形成具有优异蚀刻抗性的光阻图案的光阻图案形成组合物。该发明还提供了使用该组合物的光阻图案形成方法。该组合物包括纯水和具有含芳香基取代基的侧链的水溶性树脂。该组合物还含有自由酸或与水溶性树脂结合的酸基。