An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.
一种由下式(I)表示的烷氧基化合物,以及一种含有该烷氧基化合物的薄膜形成原料。式中,R1 代表具有 2 至 4 个碳原子的直链或支链烷基,R2 和 R3 分别代表具有 1 至 4 个碳原子的直链或支链烷基。在式 (I) 中,R1 最好是乙基。R2 和 R3 中的一个或两个最好也是乙基。包括通式 (I) 所代表的氧化烷化合物的薄膜形成原料最好用作
化学气相沉积的原料。