2-[(4R)-4-[(8R,9S,10S,13R,14S,17R)-10,13-dimethyl-3,7,12-trioxo-1,2,4,5,6,8,9,11,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl]pentanoyl]oxy-3,3,3-trifluoro-2-(trifluoromethyl)propane-1-sulfonic acid

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 类固醇和类固醇衍生物
• 英文名称: 2-[(4R)-4-[(8R,9S,10S,13R,14S,17R)-10,13-dimethyl-3,7,12-trioxo-1,2,4,5,6,8,9,11,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl]pentanoyl]oxy-3,3,3-trifluoro-2-(trifluoromethyl)propane-1-sulfonic acid
• 化学式: C₂₈H₃₆F₆O₈S
• 分子量: 646.6
• InChiKey: VWTGQKBCHCGKTO-MXYUTASWSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  43
• 可旋转键数：
  8
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.86
• 拓扑面积：
  140
• 氢给体数：
  1
• 氢受体数：
  14

文献信息

• RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170184967A1

  公开（公告）日：2017-06-29

  A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on γ-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.

  提供一种聚合物，其中包含含有特定内酯环的重复单元，并且在融合环内酯的γ-丁内酯骨架上具有烷基基团，以及在内酯结构和聚合物主链之间具有烷基酯取代基团。以该聚合物为基础树脂的抗蚀组合物在DOF边缘和MEF等性能方面得到改善，并且非常有效用于精确微图案化。
• RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210141306A1

  公开（公告）日：2021-05-13

  A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W 1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W 2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M + represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

  一种抗蚀组合物，包含：（A）一种树脂，其中包含具有酸敏基团的重复单元，且不含芳香基取代的重复单元；（B）一种通过通式（B-1）表示的光酸发生剂；以及（C）一种溶剂，其中W1表示具有4至12个碳原子且含有杂原子的环状二价碳氢基团；W2表示具有4至14个碳原子且不含杂原子的环状一价碳氢基团；Rf表示由以下通式表示的二价有机基团；M+表示一个离子阳离子。这提供了一种抗蚀组合物和使用该抗蚀组合物的图案化过程，该过程在光刻工艺中特别显示出有利的掩模尺寸依赖性（掩模误差因子：MEF）、线宽粗糙度（LWR）和临界尺寸均匀性（CDU），特别是在使用高能量光源，如ArF准分子激光器光束时。
• Resist composition, pattern forming process, polymer, and monomer
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10310376B2

  公开（公告）日：2019-06-04

  A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on γ-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.

  本发明提供了一种聚合物，它由含有特定内酯环的递归单元组成，在融合环内酯的 γ-丁内酯骨架上有一个烷基，在内酯结构和聚合物骨架之间有一个烷基酯取代基。以这种聚合物为基体树脂的抗蚀剂组合物在 DOF 余量和 MEF 等性能方面都有所改进，对精确微图案化非常有效。
• Resist composition and pattern forming process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US10921710B2

  公开（公告）日：2021-02-16

  A polymer comprising units having a highly fused homoadamantane skeleton at side chain end bonded to the polymer backbone via a linking group has an appropriate solvent solubility and is capable of suppressing acid diffusion. A resist composition comprising the polymer and a specific photoacid generator exhibits a good DOF margin, CD uniformity, and a minimal CD change during PPD, and is quite effective in precise micropatterning.

  一种聚合物的侧链端含有高度融合的均金刚烷骨架单元，该单元通过连接基团与聚合物骨架键合，具有适当的溶剂溶解性，并能抑制酸扩散。由该聚合物和特定光酸发生器组成的抗蚀剂组合物在 PPD 过程中表现出良好的 DOF 余量、CD 一致性和最小的 CD 变化，在精确微图案化方面非常有效。
• Resist composition and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US11340527B2

  公开（公告）日：2022-05-24

  A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

  一种抗蚀剂组合物，含有(A) 含有具有酸亲和基的重复单元且不含具有芳香取代基的重复单元的树脂；(B) 通式(B-1)所示的光酸发生器；以及 (C) 溶剂，其中 W1 代表具有 4 至 12 个碳原子且含有一个杂原子的环状二价烃基；W2 代表具有 4 至 14 个碳原子且不含杂原子的环状一价烃基团； Rf 代表如下通式所示的二价有机基团；以及 M+ 代表鎓阳离子。这就提供了一种抗蚀剂组合物和一种使用该抗蚀剂组合物的图案化工艺，尤其是在使用高能光束（如 ArF 准分子激光束）作为光源的光刻技术中，该抗蚀剂组合物和图案化工艺显示出特别有利的掩膜尺寸相关性（掩膜误差因子：MEF）、低温均匀性和临界尺寸均匀性（CDU）。