4,5-diamino-4,5-bis(3-amino-3-hydroxyiminopropyl)-1-N',8-N'-dihydroxyoctanediimidamide

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 4,5-diamino-4,5-bis(3-amino-3-hydroxyiminopropyl)-1-N',8-N'-dihydroxyoctanediimidamide
• 化学式: C₁₄H₃₂N₁₀O₄
• 分子量: 404.47
• InChiKey: HFFXANGZBWWRKV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -4
• 重原子数：
  28
• 可旋转键数：
  13
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.71
• 拓扑面积：
  287
• 氢给体数：
  10
• 氢受体数：
  10

文献信息

• STABILIZATION OF HYDROXYLAMINE CONTAINING SOLUTIONS AND METHOD FOR THEIR PREPARATION
  申请人：EKC TECHNOLOGY, INC.

  公开号：EP2207750A1

  公开（公告）日：2010-07-21
• NOVEL NITRILE AND AMIDOXIME COMPOUNDS AND METHODS OF PREPARATION
  申请人：EKC TECHNOLOGY, INC.

  公开号：EP2207872A1

  公开（公告）日：2010-07-21
• [EN] COPPER CMP POLISHING PAD CLEANING COMPOSITION COMPRISING OF AMIDOXIME COMPOUNDS<br/>[FR] COMPOSITION NETTOYANTE POUR TAMPON DE POLISSAGE CMP DU CUIVRE, COMPRENANT DES COMPOSÉS AMIDOXIME
  申请人：EKC TECHNOLOGY INC

  公开号：WO2009058272A1

  公开（公告）日：2009-05-07

  The present invention relates to methods of using amidoxime compositions for cleaning polishing pads, particularly after chemical mechanical planarization or polishing is provided. A polishing pad is cleaned of Cu CMP by-products, subsequent to or during planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising an aqueous amidoxime compound solution in water.
• [EN] CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE<br/>[FR] COMPOSITION DE POLISSAGE MÉCANO-CHIMIQUE ET DE NETTOYAGE DE PLAQUETTES COMPRENANT DES COMPOSÉS AMIDOXIME ET PROCÉDÉ D'UTILISATION ASSOCIÉ
  申请人：EKC TECHNOLOGY INC

  公开号：WO2009058274A1

  公开（公告）日：2009-05-07

  A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.
• [EN] METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMPOSITIONS<br/>[FR] PROCÉDÉS DE NETTOYAGE DE DISPOSITIFS À SEMI-CONDUCTEURS EN EXTRÉMITÉ ARRIÈRE DE LIGNE, FAISANT APPEL À DES COMPOSITIONS À BASE D'AMIDOXIME
  申请人：EKC TECHNOLOGY INC

  公开号：WO2009058278A1

  公开（公告）日：2009-05-07

  The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.