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Diphenyl(naphthyl)sulphonium triflate

中文名称
——
中文别名
——
英文名称
Diphenyl(naphthyl)sulphonium triflate
英文别名
[naphthalen-1-yl(diphenyl)-λ4-sulfanyl] trifluoromethanesulfonate
Diphenyl(naphthyl)sulphonium triflate化学式
CAS
——
化学式
C23H17F3O3S2
mdl
——
分子量
462.5
InChiKey
VJBTYKFEWUVBFJ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    7.7
  • 重原子数:
    31
  • 可旋转键数:
    5
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.04
  • 拓扑面积:
    52.8
  • 氢给体数:
    0
  • 氢受体数:
    7

反应信息

点击查看最新优质反应信息

文献信息

  • RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:US20160145231A1
    公开(公告)日:2016-05-26
    A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.
    描述了一种包含由通式(1)或(2)表示的化合物的光刻胶组合物,使用该组合物形成光刻胶图案的方法,用于该组合物的多化合物,以及可以由其衍生的醇化合物。
  • OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:US20200262787A1
    公开(公告)日:2020-08-20
    The present invention provides an optical component forming composition comprising a tellurium-containing compound or a tellurium-containing resin.
    本发明提供了一种包括含化合物或含树脂的光学元件成型组合物。
  • CROSSLINKING AGENT, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING METHOD USING THE NEGATIVE RESIST COMPOSITION
    申请人:Okuyama Kenichi
    公开号:US20120115084A1
    公开(公告)日:2012-05-10
    Disclosed are a negative resist composition which shows excellent sensitivity and resolution in pattern formation by exposure to electron beams or EUV, a novel crosslinking agent suitable for the resist composition, and a pattern forming method using the resist composition. The negative resist composition comprises: (A) a polyphenol compound comprising two or more phenolic hydroxyl groups in a molecule thereof and having a molecular weight of 300 to 3,000, (B) an acid generator which directly or indirectly produces acid by exposure to active energy rays having a wavelength of 248 nm or less, and (C) a crosslinking agent represented by the following chemical formula (1). (The symbols shown in the formula (1) are defined in the Description).
    本发明涉及一种负型光阻组合物,通过暴露于电子束或极紫外线下表现出优异的感光性和分辨率,以及适用于该光阻组合物的新型交联剂和使用该光阻组合物的图案形成方法。该负型光阻组合物包括:(A)一种聚化合物,其分子中包含两个或更多羟基,并且分子量为300至3,000,(B)一种酸发生剂,通过暴露于波长为248nm或更短的活性能量射线而直接或间接产生酸,以及(C)一种由以下化学式(1)表示的交联剂。(化学式(1)中所示的符号在说明中有定义)。
  • Process for producing triarylsulfonium salt
    申请人:Sumino Motoshige
    公开号:US20070083060A1
    公开(公告)日:2007-04-12
    [Subject] To provide a method for effectively producing a triarylsulfonium salt having a structure that only one aromatic ring of three aromatic rings on the cation portion thereof is different from the other two aromatic rings (hereinafter, abbreviated as a triarylsulfonium salt relating to the present invention) in a high yield without forming any byproduct. [Means for Solution Problems] The present invention relates to a method for producing a triarylsulfonium salt represented by the general formula [4]: wherein, two R 1 's represent each hydrogen atom, halogen atom, alkyl group, lower haloalkyl group, alkoxy group, acyl group, hydroxyl group, amino group, nitro group or cyano group; R represents an aryl group which may have a substituent selected from a halogen atom, an alkyl group, a lower haloalkyl group, an alkoxy group, an alkylthio group, a N-alkylcarbamoyl group and a carbamoyl group, and the above substituent is different from one represented by the above R 1 ; and A 1 represents a strong acid residue, comprising reacting a diaryl sulfoxide represented by the general formula [1]: wherein, R 1 represents the same as above, and an aryl Grignard reagent represented by the general formula [2]: RMgX   [2] wherein, X represents a halogen atom; R represents the same as above, in the presence of an activator with high affinity for oxygen of 3 to 7.5 equivalents relative to the above diaryl sulfoxide, and then reacting the resultant reaction mixture with a strong acid represented by the general formula [3]: HA 1 [3] wherein, A 1 represents the same as above, or a salt thereof.
    [主题] 提供一种有效地生产三芳基鎓盐的方法,其结构中阳离子部分的三个芳环中仅有一个芳环与另外两个芳环不同(以下简称与本发明有关的三芳基鎓盐),高产率地生产三芳基鎓盐而不产生任何副产物。 [解决问题的方法] 本发明涉及一种生产由一般式[4]表示的三芳基鎓盐的方法: 其中,两个R1分别代表氢原子、卤素原子、烷基、较低的卤代烷基、烷氧基、酰基、羟基、基、硝基或基;R代表芳基,该芳基可以具有从卤素原子、烷基、较低的卤代烷基、烷氧基、烷基、N-烷基甲酰基和甲酰基中选择的取代基,上述取代基与上述R1所代表的取代基不同;A1代表强酸残基。 该方法包括在高亲氧活化剂存在下,使一由一般式[1]表示的二芳基亚砜: 其中,R1代表与上述相同,以及由一般式[2]表示的芳基格氏试剂反应: RMgX   [2] 其中,X代表卤素原子;R代表与上述相同,然后将所得反应混合物与一由一般式[3]表示的强酸: HA1[3] 其中,A1代表与上述相同或其盐反应。
  • Compound for Resist and Radiation-Sensitive Composition
    申请人:Echigo Masatoshi
    公开号:US20080113294A1
    公开(公告)日:2008-05-15
    A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.
    一种辐射敏感的组合物,包含1至80重量%的固体组分和20至99重量%的溶剂。固体组分包含化合物B,其具有(a)通过向多化合物A的至少一个羟基引入酸解离基而导出的结构,多化合物A通过二元至四元芳香酮或芳香醛的缩合反应,每个具有5至36个碳原子的化合物与具有1至3个羟基和6至15个碳原子的化合物结合,并且(b)分子量为400至2000。含有化合物B的组合物非常敏感于辐射,例如KrF准分子激光器,极紫外线,电子束和X射线,并且提供具有高分辨率,高耐热性和高蚀刻抗性的抗阻图案,因此可用作酸放大的非聚合物抗阻材料。
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