Cyclohexyl-[5-[cyclohexyl(dimethyl)azaniumyl]pentyl]-dimethylazanium

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: Cyclohexyl-[5-[cyclohexyl(dimethyl)azaniumyl]pentyl]-dimethylazanium
• 化学式: C21H44N2+2
• 分子量: 324.6
• InChiKey: HKEYJKSPOGOCQH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5
• 重原子数：
  23
• 可旋转键数：
  8
• 环数：
  2.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• ZEOLITE CATALYST FOR HYDROISOMERIZATION OF LIGHT PARAFFINS TO PRODUCE HIGH OCTANE GASOLINE
  申请人：Chen Con-Yen

  公开号：US20110130610A1

  公开（公告）日：2011-06-02

  The present invention is directed to a process for isomerizing light paraffins by using a catalyst containing a zeolite selected from the group consisting of CON- and TUN-type zeolites, and at least one Group VIII metal. It has been found that the CON- and TUN-type zeolite catalysts of the present invention selectively convert C 6 paraffins into the more favorable higher octane C 6 isomer, namely 2,3-dimethylbetane (RON 101.0), over the less favorable C 6 isomer, namely octane 2,2-dimethylbutane (RON 91.8).

  本发明涉及一种通过使用含有从CON-和TUN型沸石中选择的沸石和至少一种第VIII族金属的催化剂来异构化轻质烷烃的方法。已经发现，本发明的CON-和TUN型沸石催化剂选择性地将C6烷烃转化为更有利的较高辛烷值的C6异构体，即2,3-二甲基戊烷（RON 101.0），而不利的C6异构体，即辛烷2,2-二甲基丁烷（RON 91.8）。
• EMM-22 MOLECULAR SIEVE MATERIAL, ITS SYNTHESIS AND USE
  申请人：ExxonMobil Chemical Patents Inc.

  公开号：EP2744752A1

  公开（公告）日：2014-06-25
• POLISHING LIQUID
  申请人：KAMIMURA Tetsuya

  公开号：US20080203354A1

  公开（公告）日：2008-08-28

  The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.
• POLISHING LIQUID AND POLISHING METHOD USING THE SAME
  申请人：Kamimura Tetsuya

  公开号：US20090087989A1

  公开（公告）日：2009-04-02

  The invention provides a polishing liquid used for chemical mechanical polishing during planarization of a semiconductor integrated circuit, having at least: a benzotriazole compound (A) represented by the following Formula (1); an acid (B); and a water-soluble polymer (C). The invention further provides a polishing method for planarizing a semiconductor integrated circuit, the polishing method includes at least essentially chemically and mechanically polishing a barrier layer of the semiconductor integrated circuit using the polishing liquid. In Formula (1), each of R 01 to R 05 independently represents a hydrogen atom or an alkyl group, and at least one of R 01 to R 05 represents an alkyl group.
• Polishing liquid and polishing method
  申请人：Saie Toshiyuki

  公开号：US20090215270A1

  公开（公告）日：2009-08-27

  A polishing liquid is provided which has good storage stability and is capable of inhibiting generation of scratching caused by aggregation of solid abrasive grains or the like during use. A polishing method using the polishing liquid is also provided. The polishing liquid includes: (a) an aqueous solution A including colloidal silica particles in an amount of from 5 mass % to 40 mass % with respect to the total mass of the aqueous solution A, and having a pH of from 1 to 7; and (b) an aqueous solution B including a quaternary ammonium cation, wherein the aqueous solution A and the aqueous solution B are separately prepared and mixed to provide the polishing liquid immediately before used in polishing.