7,8,9,10-tetrafluoro-5,12-bis(triisopropylsilylethynyl)tetraceno[2,3-b]thiophene | 1027301-00-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 并四苯
• 英文名称: 7,8,9,10-tetrafluoro-5,12-bis(triisopropylsilylethynyl)tetraceno[2,3-b]thiophene
• 英文别名: Tri(propan-2-yl)-[2-[16,17,18,19-tetrafluoro-2-[2-tri(propan-2-yl)silylethynyl]-6-thiapentacyclo[11.8.0.03,11.05,9.015,20]henicosa-1(21),2,4,7,9,11,13,15(20),16,18-decaen-12-yl]ethynyl]silane；tri(propan-2-yl)-[2-[16,17,18,19-tetrafluoro-2-[2-tri(propan-2-yl)silylethynyl]-6-thiapentacyclo[11.8.0.03,11.05,9.015,20]henicosa-1(21),2,4,7,9,11,13,15(20),16,18-decaen-12-yl]ethynyl]silane
• CAS: 1027301-00-3
• 化学式: C₄₂H₄₈F₄SSi₂
• 分子量: 717.074
• InChiKey: JXROYCJCBQUCIV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  14.06
• 重原子数：
  49
• 可旋转键数：
  10
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.43
• 拓扑面积：
  28.2
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  7,8,9,10-tetrafluoro-tetraceno[2,3-b]thiophene 、 三异丙基硅基乙炔 在 正丁基锂 、 盐酸 、 tin(ll) chloride 作用下， 以 乙醚 为溶剂， 反应 1.5h， 以70%的产率得到7,8,9,10-tetrafluoro-5,12-bis(triisopropylsilylethynyl)tetraceno[2,3-b]thiophene
  参考文献：
  名称：

  Ambipolar, High Performance, Acene-Based Organic Thin Film Transistors

  摘要：

  We present a high performance, ambipolar organic field-effect transistor composed of a single material. Ambipolar molecules are rare, and they can enable low-power complementary-like circuits. This low band gap, asymmetric linear acene contains electron-withdrawing fluorine atoms, which lower the C; molecular orbital energies, allowing the injection of electrons. While hole and electron mobilities of up to 0.071 and 0.37 cm(2)/ V center dot s, respectively, are reported on devices measured in nitrogen, hole mobilities of up to 0.12 cm(2)/V center dot s were found in ambient, with electron transport quenched. These devices were fabricated on octadecyltrimethoxysilane-treated surfaces at a substrate temperature of 60 degrees C.

  DOI：

  10.1021/ja8005918

文献信息

• Ambipolar, High Performance, Acene-Based Organic Thin Film Transistors
  作者：Ming L. Tang、Anna D. Reichardt、Nobuyuki Miyaki、Randall M. Stoltenberg、Zhenan Bao

  DOI：10.1021/ja8005918

  日期：2008.5.1

  We present a high performance, ambipolar organic field-effect transistor composed of a single material. Ambipolar molecules are rare, and they can enable low-power complementary-like circuits. This low band gap, asymmetric linear acene contains electron-withdrawing fluorine atoms, which lower the C; molecular orbital energies, allowing the injection of electrons. While hole and electron mobilities of up to 0.071 and 0.37 cm(2)/ V center dot s, respectively, are reported on devices measured in nitrogen, hole mobilities of up to 0.12 cm(2)/V center dot s were found in ambient, with electron transport quenched. These devices were fabricated on octadecyltrimethoxysilane-treated surfaces at a substrate temperature of 60 degrees C.