Cyclopentanemethanaminium, N,N,N-trimethyl- | 30833-80-8

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: Cyclopentanemethanaminium, N,N,N-trimethyl-
• 英文别名: cyclopentylmethyl(trimethyl)azanium
• CAS: 30833-80-8
• 化学式: C9H20N+
• 分子量: 142.26
• InChiKey: YXKYPKLQNIJACL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.1
• 重原子数：
  10
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160041465A1

  公开（公告）日：2016-02-11

  The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
• RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170075224A1

  公开（公告）日：2017-03-16

  A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
• RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20210294211A1

  公开（公告）日：2021-09-23

  A resist composition comprising a base polymer and a quencher containing an onium salt of iodized benzene ring-containing fluorosulfonamide offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
• US9651863B2
  申请人：——

  公开号：US9651863B2

  公开（公告）日：2017-05-16
• US9939729B2
  申请人：——

  公开号：US9939729B2

  公开（公告）日：2018-04-10