CHEMICALLY AMPLIFIED RESIST MATERIAL, TOPCOAT FILM MATERIAL AND PATTERN FORMATION METHOD USING THE SAME
申请人:ENDO Masayuki
公开号:US20080286687A1
公开(公告)日:2008-11-20
A resist film made of a chemically amplified resist material including a polymer; a photo-acid generator and carbamoyl oxime is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is baked, and the baked resist film is developed, so as to form a resist pattern made of the resist film.