2-(2-Amino-1,1-dimethyl-ethylamino)-ethanol | 68750-17-4

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 2-(2-Amino-1,1-dimethyl-ethylamino)-ethanol
• 英文别名: 2-[(1-amino-2-methylpropan-2-yl)amino]ethanol
• CAS: 68750-17-4
• 化学式: C₆H₁₆N₂O
• 分子量: 132.2
• InChiKey: KMHJOYUPTXROKZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.2
• 重原子数：
  9
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  58.3
• 氢给体数：
  3
• 氢受体数：
  3

文献信息

• A PHOTORESIST IMAGE-FORMING PROCESS USING DOUBLE PATTERNING
  申请人：AZ Electronic Materials USA Corp.

  公开号：EP2389612A1

  公开（公告）日：2011-11-30
• ORGANIC TUNGSTEN COMPLEXES
  申请人：Vanderbilt Chemicals, LLC

  公开号：EP2782921B1

  公开（公告）日：2018-05-02
• WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND METHOD FOR THE FORMATION OF MICROPATTERNS WITH THE SAME
  申请人：Hong Sung-Eun

  公开号：US20100119717A1

  公开（公告）日：2010-05-13

  A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern ( 2 ) formed on a substrate ( 1 ) to form a water-soluble resin film ( 3 ) , modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer ( 4 ) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure. It is preferable to use as the water-soluble vinyl resin a homopolymer of a nitrogen-containing vinyl monomer such as acrylamine, vinylpyrrolidone or vinylimidazole, a copolymer of two or more nitrogen-containing vinyl monomers, or a copolymer of at least one nitrogen-containing vinyl monomer and at least one nitrogen-free vinyl monomer.
• Photoresist Image-forming Process Using Double Patterning
  申请人：Cao Yi

  公开号：US20100183851A1

  公开（公告）日：2010-07-22

  A process for forming a double photoresist pattern is disclosed.
• Anti-Agglomerants for the Prevention of Hydrates
  申请人：Lubrizol Oilfield Solutions, Inc.

  公开号：US20180037804A1

  公开（公告）日：2018-02-08

  The implementations described herein relate to imidazoline quaternary ammonium based compositions, processes for the preparation thereof and to the use of imidazoline quaternary ammonium based compositions as anti-agglomerants. In some implementations, the anti-agglomerant compositions described herein are able to handle greater than 10° C. subcooling in a sour system up to 40,000 ppm H 2 S and also without the need for a hydrocarbon phase. It is believed that some of the anti-agglomerants described herein can function without a hydrocarbon phase in sour conditions.