申请人:Rohm and Haas Electronic Materials CMP Holdings, Inc.
公开号:US10119048B1
公开(公告)日:2018-11-06
The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of one or more surfactants chosen from an amine alkoxylate, an ammonium alkoxylate, or mixtures thereof, and colloidal silica particles having at least one cationic species, the colloidal silica particles being present in the amount of from 1 to 30 wt. %, as solids based on the total weight of the composition, and the compositions having a pH ranging from 2 to 6. The surfactants have a hydrophobic tail. The CMP polishing compositions exhibit tunable oxide:polysilicon and oxide:nitride removal rate ratios and reduce both silicon nitride and polysilicon removal rates significantly without significantly reducing dielectric (e.g. TEOS) removal rates.
本发明提供了水性化学机械平坦化(CMP)抛光组合物,该组合物包含一种或多种表面活性剂的混合物,这些表面活性剂选自烷氧基化胺、烷氧基化铵或它们的混合物,以及具有至少一种阳离子种类的胶体二氧化硅颗粒,胶体二氧化硅颗粒的固体含量为组合物总重量的1至30重量%,组合物的pH值为2至6。表面活性剂具有疏水尾部。CMP 抛光组合物具有可调的氧化物:多晶硅和氧化物:氮化物去除率比率,可显著降低氮化硅和多晶硅的去除率,而不会显著降低介电质(如 TEOS)的去除率。