4-methyl-naphthalene-1,6-diol | 860252-40-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 4-methyl-naphthalene-1,6-diol
• 英文别名: 4-Methyl-naphthalin-1,6-diol；4-Methylnaphthalene-1,6-diol
• CAS: 860252-40-0
• 化学式: C₁₁H₁₀O₂
• 分子量: 174.199
• InChiKey: BMGNFMQRCUTKBD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  13
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.09
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  4-methyl-naphthalene-1,6-diol 、 乙酰乙酸乙酯 在 盐酸 、 乙醇 作用下， 生成 8-hydroxy-4,6-dimethyl-benzo[h]chromen-2-one
  参考文献：
  名称：

  343.二羟基萘的进一步研究

  摘要：

  DOI：

  10.1039/jr9560001743
• 作为产物：
  描述：

  4,7-dimethoxy-1-methylnaphthalene 在 吡啶盐酸盐 作用下， 生成 4-methyl-naphthalene-1,6-diol
  参考文献：
  名称：

  343.二羟基萘的进一步研究

  摘要：

  DOI：

  10.1039/jr9560001743

文献信息

• COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3508918A1

  公开（公告）日：2019-07-10

  The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

  本发明提供了：一种用于形成有机薄膜的组合物，该组合物具有高过滤性，能够形成具有高图案抗弯曲性的有机薄膜，并且在干法蚀刻后能够防止特别细于40纳米的高光谱线图案发生线崩溃和扭曲；一种使用该组合物的形成有机薄膜的方法和图案化工艺；以及一种用于制造半导体器件的基板，包括在该基板上形成的有机薄膜。用于形成有机薄膜的组合物包括缩合物（A），它是下式（1）所示的二羟基萘和缩合剂的缩合产物，或缩合物（A）的衍生物。冷凝液（A）或冷凝液（A）的衍生物所含成分元素中的硫含量按质量计算不超过 100 ppm。
• Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10007183B2

  公开（公告）日：2018-06-26

  The invention provides a compound for forming an organic film having a partial structure represented by the following formula (ii), wherein the ring structures Ar1, Ar2 and Ar3 each represent a substituted or unsubstituted benzene ring or naphthalene ring; e is 0 or 1; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; L0 represents a linear, branched or cyclic divalent organic group having 1 to 32 carbon atoms; and the methylene group constituting L0 may be substituted by an oxygen atom or a carbonyl group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling/planarizing characteristics.

  本发明提供了一种用于形成有机薄膜的化合物，其部分结构由下式(ii)表示、 其中，环结构 Ar1、Ar2 和 Ar3 分别代表取代或未取代的苯环或萘环；e 为 0 或 1；R0 代表氢原子或具有 1 至 30 个碳原子的线性、支链或环状一价有机基团；L0 代表具有 1 至 32 个碳原子的线性、支链或环状二价有机基团；构成 L0 的亚甲基可被氧原子或羰基取代。本发明可提供一种有机薄膜组合物，用于形成具有高抗干蚀刻性和高级填充/平面化特性的有机薄膜。
• Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US11018015B2

  公开（公告）日：2021-05-25

  The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

  本发明提供了：一种用于形成有机薄膜的组合物，该组合物具有高过滤性，能够形成具有高图案抗弯曲性的有机薄膜，并且在干法蚀刻后能够防止特别细于40纳米的高光谱线图案发生线崩溃和扭曲；一种使用该组合物的形成有机薄膜的方法和图案化工艺；以及一种用于制造半导体器件的基板，包括在该基板上形成的有机薄膜。用于形成有机薄膜的组合物包括缩合物（A），它是下式（1）所示的二羟基萘和缩合剂的缩合产物，或缩合物（A）的衍生物。冷凝液（A）或冷凝液（A）的衍生物所含成分元素中的硫含量按质量计算不超过 100 ppm。
• Preparation of organic polymers
  申请人：RAYCHEM LIMITED

  公开号：EP0154506B1

  公开（公告）日：1992-02-05
• COMPOUND FOR FORMING ORGANIC FILM, AND ORGANIC FILM COMPOSITION USING THE SAME, PROCESS FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160018735A1

  公开（公告）日：2016-01-21

  The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2), wherein R 1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R 1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L 7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L 8′ represents the partial structure represented by the following formula (i), 0≦o<1, 0