1,1'-(1,5-pentanediyl)bis(4-aza-1-azoniabicyclo[2.2.2]octane)

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 二嗪烷类
• 英文名称: 1,1'-(1,5-pentanediyl)bis(4-aza-1-azoniabicyclo[2.2.2]octane)
• 英文别名: r-(1,5-pentanediyl)bis(4-aza-1-azoniabicyclo[2.2.2]octane)；(1,5-pentanediyl)bis(4-aza-1-azoniabicyclo[2.2.2]octane)；1-[5-(4-Aza-1-azoniabicyclo[2.2.2]octan-1-yl)pentyl]-4-aza-1-azoniabicyclo[2.2.2]octane
• 化学式: C₁₇H₃₄N₄
• 分子量: 294.484
• InChiKey: VUPNTGHWYDSRNR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.6
• 重原子数：
  21
• 可旋转键数：
  6
• 环数：
  6.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  6.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  、 1,1'-(1,5-pentanediyl)bis(4-aza-1-azoniabicyclo[2.2.2]octane) 以 二氯甲烷-D2 、 氘代乙腈 为溶剂， 生成
  参考文献：
  名称：

  Allosteric cooperativity in ternary complexes with low symmetry

  摘要：

  在一个客体上有两个不同宿主的低对称性三元复合物中，实现了很强的正异化作用。

  DOI：

  10.1039/c8cc04195d

文献信息

• MOLECULAR SIEVE INTERGROWTHS OFCHA
  申请人：Johnson Matthey Public Limited Company

  公开号：EP3947284A1

  公开（公告）日：2022-02-09
• POLISHING LIQUID
  申请人：KAMIMURA Tetsuya

  公开号：US20080203354A1

  公开（公告）日：2008-08-28

  The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.
• POLISHING LIQUID AND POLISHING METHOD USING THE SAME
  申请人：Kamimura Tetsuya

  公开号：US20090087989A1

  公开（公告）日：2009-04-02

  The invention provides a polishing liquid used for chemical mechanical polishing during planarization of a semiconductor integrated circuit, having at least: a benzotriazole compound (A) represented by the following Formula (1); an acid (B); and a water-soluble polymer (C). The invention further provides a polishing method for planarizing a semiconductor integrated circuit, the polishing method includes at least essentially chemically and mechanically polishing a barrier layer of the semiconductor integrated circuit using the polishing liquid. In Formula (1), each of R 01 to R 05 independently represents a hydrogen atom or an alkyl group, and at least one of R 01 to R 05 represents an alkyl group.
• Polishing liquid and polishing method
  申请人：Saie Toshiyuki

  公开号：US20090215270A1

  公开（公告）日：2009-08-27

  A polishing liquid is provided which has good storage stability and is capable of inhibiting generation of scratching caused by aggregation of solid abrasive grains or the like during use. A polishing method using the polishing liquid is also provided. The polishing liquid includes: (a) an aqueous solution A including colloidal silica particles in an amount of from 5 mass % to 40 mass % with respect to the total mass of the aqueous solution A, and having a pH of from 1 to 7; and (b) an aqueous solution B including a quaternary ammonium cation, wherein the aqueous solution A and the aqueous solution B are separately prepared and mixed to provide the polishing liquid immediately before used in polishing.
• Polishing slurry
  申请人：Yamada Tooru

  公开号：US20090311864A1

  公开（公告）日：2009-12-17

  A polishing slurry used in chemical mechanical polishing of a barrier layer and an interlayer dielectric film in a semiconductor integrated circuit includes an abrasive, an oxidizer, an anticorrosive, an acid, a surfactant and an inclusion compound. The polishing slurry has a pH of less than 5. The resulting polishing slurry contains a solid abrasive used in barrier CMP for polishing a barrier layer made of a metallic barrier material, has excellent storage stability, achieves a good polishing rate in various films to be polished such as the barrier layer, and is capable of independently controlling the polishing rate with respect to the various films to be polished while further suppressing agglomeration of the abrasive particles.