5-hydroxymethylacenaphthylene

• 分子结构分类: 有机化合物 - 苯类化合物 - 吖萘类
• 英文名称: 5-hydroxymethylacenaphthylene
• 英文别名: Acenaphthylen-5-ylmethanol
• 化学式: C₁₃H₁₀O
• 分子量: 182.222
• InChiKey: KBSNYVVAXWORRO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  14
• 可旋转键数：
  1
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.08
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  5-hydroxymethylacenaphthylene 、 苊烯 生成 poly(acenaphthylene-co-5-hydroxymethylacenaphthylene)
  参考文献：
  名称：

  摘要：

  DOI：

文献信息

• METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN
  申请人：Shimizu Daisuke

  公开号：US20100233635A1

  公开（公告）日：2010-09-16

  A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

  一种形成图案的方法包括：（1）在基板上形成一个底层薄膜，该底层薄膜包含（A）一种辐射敏感的酸发生剂，能够在辐射射线的作用下产生酸，或者（B）一种辐射敏感的碱发生剂，能够在辐射射线的作用下产生碱；（2）通过一个预定图案的掩模，用辐射射线照射底层薄膜，以获得已通过预定图案选择性暴露的底层薄膜部分；（3）在底层薄膜上形成一层有机薄膜，以实现暴露的底层薄膜部分与形成在暴露的底层薄膜部分上的有机薄膜的化学键合；（4）去除除暴露的底层薄膜部分外的底层薄膜区域上形成的有机薄膜。
• Acenaphthylene derivative, polymer, and antireflection film-forming composition
  申请人：JSR Corporation

  公开号：EP1386904B1

  公开（公告）日：2008-09-17
• PATTERN-FORMING METHOD
  申请人：KONNO Keiji

  公开号：US20100248167A1

  公开（公告）日：2010-09-30

  A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern.
• COMPOSITION FOR FORMING RESIST LOWER LAYER FILM
  申请人：Yoshimura Nakaatsu

  公开号：US20110251323A1

  公开（公告）日：2011-10-13

  A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.
• HARD MASK COMPOSITION, METHOD OF FORMING A PATTERN, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERN
  申请人：Kim Min-Soo

  公开号：US20120168894A1

  公开（公告）日：2012-07-05

  A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and an aromatic ring-containing compound, the aromatic ring-containing compound including at least one of a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2: