3,4-Ethylenedioxy-substituted bithiophene-alt-thiophene-S,S-dioxide regular copolymers. Synthesis and conductive, magnetic and luminescence properties.
作者:Anna Berlin、Gianni Zotti、Sandro Zecchin、Gilberto Schiavon、Massimo Cocchi、Dalia Virgili、Cristiana Sabatini
DOI:10.1039/b206669f
日期:2003.12.10
Polyconjugated regular bithiophene-alt-thiophene-S,S-dioxide copolymers were produced by anodic coupling of variously 3,4-ethylenedioxy-substituted 2,5-bis(2-thienyl)thiophene-S,S-dioxide. The polymers were characterized by cyclic voltammetry, FTIR reflection-absorption and UV-vis spectroscopy, MALDI-TOF mass spectroscopy, electrochemical quartz crystal microbalance, in situ ESR and in situ conductivity techniques, photo- and electro-luminescence measurements. The regular alternation of electron-rich and -poor thiophene rings in the polymer chain operated by the ethylenedioxy and S,S-dioxide moieties produces a finite window of conductivity. Alkyl-protection of the β-positions of the thiophene-S,S-dioxide ring gave low-defect and soluble oligomers which were investigated in single-layer organic light-emitting devices (OLEDs). Photoluminescence quantum efficiency of ca. 1% and external electroluminescence quantum efficiencies of 0.01% photon/electron at a luminance of 100 cd m−2 were obtained.
通过阳极偶联不同的3,4-乙二氧基取代的2,5-双(2-噻吩基)噻吩-S,S-二氧化物制备了聚共轭常规联噻吩-替代噻吩-S,S-二氧化物共聚物。通过循环伏安法、FTIR反射吸收和紫外可见光谱、MALDI-TOF质谱、电化学石英晶体微天平、原位ESR和原位电导率技术、光致发光和电致发光测量对聚合物进行了表征。聚合物链中由亚乙基二氧基和S,S-二氧化物部分控制的富电子和贫电子噻吩环的规则交替产生了有限的电导率窗口。噻吩-S,S-二氧化物环的β-位置的烷基保护产生低缺陷且可溶的低聚物,并在单层有机发光器件(OLED)中进行了研究。光致发光量子效率约为在亮度为 100 cd m−2 时获得了 1% 和 0.01% 光子/电子的外部电致发光量子效率。