Reactions of (CH3)3SnM(CH3)3 (M = Si; Ge) with chlorotrimethylstannane and dichlorodimethylstannane in methanol solution
作者:Matthew J. Cuthbertson、Peter R. Wells
DOI:10.1016/0022-328x(85)80065-6
日期:1985.5
The reactions of (CH3)3SnM(CH3)3 for M = Si and Ge with (CH3)3SnCl or (CH3)2SnCl2 in methanol follow the same path as the corresponding reactions of (CH3)6Sn2, and involve SnCH3cleavage at essentially the same rate. Complications arise from reaction of HCl generated by (CH3)3MCl solvolysis with the intermediate dimethylstannylene, but not through its reaction with the substrates.
M = Si和Ge的(CH 3)3 SnM(CH 3)3与(CH 3)3 SnCl或(CH 3)2 SnCl 2在甲醇中的反应遵循与(CH 3)相应反应相同的路径6 Sn 2和Sn 3 CH 3的裂解基本相同。复杂性是由(CH 3)3 MCl溶剂分解生成的HCl与中间体二甲基亚锡的反应引起的,而不是由其与底物的反应引起的。
Reactions of Trialkylstannane Anions R<sub>3</sub>Sn<sup>−</sup>with Arylstannanes ArSnR<sub>3</sub>′
作者:Kunio Mochida
DOI:10.1246/bcsj.60.3299
日期:1987.9
initial tin–alkali metal exchange or an electron-transfer forming aryl anions and distannanes which subsequently react to the substitution products. Aryl radicalintermediates by an electron-transfer process are also important in the reactions of trialkylstannane anions with electron-withdrawing groups-substituted arylstannanes, 1-naphthylstannanes, diphenylstannanes, and triphenylmethylstannane as good
研究了三烷基锡烷阴离子 R3Sn− 与芳基锡烷 ArSnR3' 的反应;三烷基锡烷阴离子与芳基锡烷在 50 °C 下以良好的产率得到取代产物 ArSnR3。当用于捕获游离阴离子的叔丁胺存在于反应混合物中时,这些取代产物中的大多数被转移到还原产物 ArH。这些结果与最初的锡碱金属交换或电子转移形成芳基阴离子和二锡烷一致,随后与取代产物反应。通过电子转移过程产生的芳基自由基中间体在三烷基锡烷阴离子与吸电子基团取代的芳基锡烷、1-萘基锡烷、二苯基锡烷和三苯甲基锡烷作为良好的电子受体底物的反应中也很重要。