申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
公开号:US20140235059A1
公开(公告)日:2014-08-21
A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1):
(in Formula (1), each of Ar
1
and Ar
2
is a benzene ring or a naphthalene ring). A method for manufacturing a semiconductor device, including: forming an underlayer film on a semiconductor substrate with the resist underlayer film-forming composition; forming a hardmask on the underlayer film; forming a resist film on the hardmask; forming a resist pattern by irradiation with light or an electron beam followed by development; etching the hardmask with the resist pattern; etching the underlayer film with the hardmask thus patterned; and processing the semiconductor substrate with the underlayer film thus patterned.