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N-(4-methylphenyl)-4-(1-pyridin-4-ylethyl)naphthalen-1-amine

中文名称
——
中文别名
——
英文名称
N-(4-methylphenyl)-4-(1-pyridin-4-ylethyl)naphthalen-1-amine
英文别名
——
N-(4-methylphenyl)-4-(1-pyridin-4-ylethyl)naphthalen-1-amine化学式
CAS
——
化学式
C24H22N2
mdl
——
分子量
338.4
InChiKey
RZOPAJYMYUPHQY-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    6.3
  • 重原子数:
    26
  • 可旋转键数:
    4
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.12
  • 拓扑面积:
    24.9
  • 氢给体数:
    1
  • 氢受体数:
    2

文献信息

  • DIARYLAMINE NOVOLAC RESIN
    申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
    公开号:US20140235059A1
    公开(公告)日:2014-08-21
    A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1): (in Formula (1), each of Ar 1 and Ar 2 is a benzene ring or a naphthalene ring). A method for manufacturing a semiconductor device, including: forming an underlayer film on a semiconductor substrate with the resist underlayer film-forming composition; forming a hardmask on the underlayer film; forming a resist film on the hardmask; forming a resist pattern by irradiation with light or an electron beam followed by development; etching the hardmask with the resist pattern; etching the underlayer film with the hardmask thus patterned; and processing the semiconductor substrate with the underlayer film thus patterned.
  • US9263286B2
    申请人:——
    公开号:US9263286B2
    公开(公告)日:2016-02-16
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